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SSDI[Solid States Devices, Inc]
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| Part No. |
SFT8600_4 SFT8600-4 SFT8600/4
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| OCR Text |
...S DATA SHEET
FEATURES:
bvcer to 1000 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250mA Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4:s TYP MAX... |
| Description |
1 AMP 1000 VOLTS NPN TRANSISTOR
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| File Size |
52.95K /
2 Page |
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SSDI[Solid States Devices, Inc]
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| Part No. |
SFT5015-4 SFT5013-4 SFT5014-4
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| OCR Text |
...Operating Eutectic Die Attach * bvcer and BVCBO to 1000V * Low Leakage at High Temperature * High Gain, Low Saturation * TX, TXV and Space Level screening available * Designed for Complimentary Use with SFT5094-4
MAXIMUM RATINGS
Collect... |
| Description |
0.5 AMP 800 - 1000 VOLTS NPN TRANSISTOR
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| File Size |
26.27K /
2 Page |
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it Online |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD4017
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| OCR Text |
...=
25 C)
BVCBO BVEBO BVCEO bvcer ICBO hFE
IC = 100 mA IE = 10 mA IC = 40 mA IC = 40 mA VCE = 24 V VCE = 20 V IC = 2 A RBE = 150
48 3.5 25 30 10 15
55 5 28 40 -- 40
-- -- -- -- -- 100
V V V V mA --
DYNAMIC
Symbol Tes... |
| Description |
806-960 MHz CELLULAR BASE STATIONS RF & MICROWAVE TRANSISTORS
RF & MICROWAVE TRANSISTORS 806-960 MHz CELLULAR BASE STATIONS
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| File Size |
85.88K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTP14N41G3VLS HGTP14N41G3VL
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| OCR Text |
.... . . . . . . . . . . . . . . . bvcer Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
14A, 410V N-Channel, Logic Level, Voltage
Clamping IGBTs
14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs
14A 410V N-Channel Logic Level Voltage Clamping IGBTs
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| File Size |
183.21K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
BUL42D BUL42D-D
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| OCR Text |
...Cob 10 TJ = 25C f(test) = 1 MHz bvcer (VOLTS) 900 800 700 600 500 400 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 300 TC = 25C 10 100 RBE (W) 1000 10000 ICER = 100 mA lC = 25 mH ICER = 10 mA
Figure 11. Capacitance
Figure 12. bvcer = f(RBE)... |
| Description |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
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| File Size |
176.46K /
12 Page |
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it Online |
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SSDI[Solid States Devices, Inc]
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| Part No. |
2N5015 2N5013 2N5014
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| OCR Text |
... SHEET
FEATURES: * * * * * * * bvcer and BVCEO to 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200 C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory TX, ... |
| Description |
0.5 AMP 800 - 1000 Volts NPN Transistor
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| File Size |
68.78K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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