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  6a-peak Datasheet PDF File

For 6a-peak Found Datasheets File :: 8966    Search Time::5ms    
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    2SC4055

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4055
OCR Text ... C Storage Time = ts I = 0.8A,1.6A B1 B2 I Fall Time = tf R= 37.5,4V L BB2 V Ratings Unit -55*150 *Z 150 *Z 600 V 450 V 600 7 V 8 A 16 4 A 8 60 W 0.5 Nm Ratings Unit Min 450 V Max 0.1 mA Max 0.1 Max 0.1 mA Min 10 Min 5 Max 1.0 V Max 1.5 ...
Description Switching Power Transistor(8A NPN)

File Size 386.37K  /  12 Page

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    2SC4056

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4056
OCR Text ... C Storage Time = ts I = 0.8A,1.6A Max 2.0Es B1 B2 I Fall Time tf R= 37.5,4V = Max 0.2 L BB2 V 2SC4056 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C DC Current Gain hFE -25C -55C 1 0.001 0.01 0.1...
Description Switching Power Transistor(8A NPN)

File Size 386.82K  /  12 Page

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    2SC4057

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4057
OCR Text ....8A IC = 4A IB1 = 0.8A, IB2 = 1.6A RL = 37.5, VBB2 = 4V Unit V mA mA V V /W MHz s 2SC4057 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C DC Current Gain hFE -25C -55C 1 0.001 0.01 0.1 1 ...
Description Switching Power Transistor(8A NPN)

File Size 510.73K  /  12 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text ...E = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 150V 5.5 1.0 3.0 0.3 400 10 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V 1 Power Transistors PC --...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6A, VGS = -10V Note4 I D = -6A, VGS = -4V Note4 I D = -6A, VDS = -10V VDS = -10V VGS = 0 f = 1MHz VGS = -10V, ID = -6A RL = 6 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown volt...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...0 I D = -1mA, VDS = -10V I D = -6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ...5 , Starting TJ = 25C 3. ISD 3.6A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essent...Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type ...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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    ITF86182SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86182SK8T
OCR Text ... VGS = -4.5V, VDD = -15V, ID = -6A tr 300 -8 -6 200 tf td(OFF) -4 WAVEFORMS IN DESCENDING ORDER: ID = -11A ID = -2A 0 15 30 45 60 75 100 td(ON) 0 0 10 20 30 40 50 -2 0 Qg, GATE CHARGE (nC) RGS, GATE TO SOURCE R...
Description 11A/ 30V/ 0.0115 Ohm/ P-Channel/ Logic Level/ Power MOSFET
11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET

File Size 172.94K  /  12 Page

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