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  60-a Datasheet PDF File

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    SUP40N25-60 SUP40N25-6007

Vishay Siliconix
Part No. SUP40N25-60 SUP40N25-6007
OCR Text 60 n-channel 250-v (d-s) 175 c mosfet characteristics ? n-channel vertical dmos ? macro model (subcircuit model) ? level 3 mos ...a novel gate-to-drain feedback capac itance netw o rk is used to model the gate charge character...
Description N-Channel 250-V (D-S) 175 Celsius MOSFET

File Size 194.18K  /  4 Page

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    HYB3164165BTL-60 HYB3164165BTL-50 HYB3164165BTL-40 HYB3164165BT-60 HYB3164165BT-50 HYB3164165BT-40 HYB3165165BTL-60 HYB3

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3164165BTL-60 HYB3164165BTL-50 HYB3164165BTL-40 HYB3164165BT-60 HYB3164165BT-50 HYB3164165BT-40 HYB3165165BTL-60 HYB3165165BTL-50 HYB3165165BTL-40 HYB3165165BT-60 HYB3165165BT-50 HYB3165165BT-40 HYB3166165BTL-60 HYB3164165BT HYB3166165BT-40 HYB3166165BT-50 HYB3166165BT-60 HYB3166165BTL-50
OCR Text 60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 4 194 304 words by 16-bit organization 0 to 70 C operating temperature Hyper...A standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refre...
Description 4M x 16 Bit 4k EDO DRAM Low Power
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)

File Size 302.81K  /  29 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB3164400J-50 HYB3165400T-60 HYB3164400J HYB3165400J-50 HYB3165400J-60 HYB3165400T-50
OCR Text 60 HYB 3165400J/T -50/-60 Preliminary Information * * * * * * * * * * * 16 777 216 words by 4-bit organization 0 to 70 C ope...a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most a...
Description 16M x 4-Bit Dynamic RAM (4k & 8k Refresh)

File Size 446.07K  /  28 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB3164405T-50 HYB3164405J-60 HYB3164405J-50 HYB3165405J-60 HYB3165405J-50 HYB3165405TL-60 HYB3164405J HYB3164405TL-50 HYB3164405TL-60 HYB3165405T-50 HYB3165405T-60 HYB3165405TL-50
OCR Text 60 HYB 3165405J/T(L) -50/-60 Preliminary Information * * * * * * * * * * * 16 777 216 words by 4-bit organization 0 to 70 C ...a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS/IBM most a...
Description 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 471.24K  /  32 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3164805L-60 HYB3164805L-50 HYB3164805T-60 HYB3164805T-50 HYB3164805J-60 HYB3164805J-50 HYB3165805TL-60 HYB3164805J HYB3164805TL-50 HYB3164805TL-60 HYB3165805J-50 HYB3165805J-60 HYB3165805T-50 HYB3165805T-60 HYB3165805TL-50
OCR Text 60 HYB 3165805J/T(L) -50/-60 Preliminary Information * * * * * * * * * * * 8 388 608 words by 8-bit organization 0 to 70 C o...a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is fabricated in SIEMENS/IBM most adv...
Description 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

File Size 474.88K  /  32 Page

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    HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q67100-Q2072 Q67100-Q2073 HYB514175BJ-50- Q67100-Q2100

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q67100-Q2072 Q67100-Q2073 HYB514175BJ-50- Q67100-Q2100
OCR Text 60 Advanced Information * * * * 262 144 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS acces...a built-in VBB generator * Low Power dissipation max. 1100 mW active (-50 version) max. 1045 mW acti...
Description 256k x 16 Bit EDO DRAM 5 V 50 ns
256k x 16 Bit EDO DRAM 5 V 60 ns
256k x 16 Bit EDO DRAM 5 V 55 ns
256k x 16-Bit EDO-DRAM

File Size 176.03K  /  22 Page

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    Infineon
Part No. HYM328000GD-60 HYM328000GD-50
OCR Text 60 Advanced Information * * 8 388 608 words by 32-bit organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50...a 32 MByte DRAM module organized as 8 388 608 words by 32-bit in a 72-pin, dual read-out, small outl...
Description 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

File Size 54.21K  /  10 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM328020GD-60 HYM328020GD-50
OCR Text 60 Preliminary Information * * 8 388 608 words by 32-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (...a 32 MByte DRAM module organized as 8 388 608 words by 32-bit in a 72-pin, dual read-out, small outl...
Description 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
8M x 32 Bit DRAM Module (SO-DIMM)
-8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE

File Size 27.53K  /  6 Page

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    Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. HYM328020GS-60 HYM328020GS-50 HYM328020S-60 HYM328020S-50 Q67100-Q2008 HYM328020S Q67100-Q2001
OCR Text 60 * SIMM modules with 8 388 608 words by 32-bit organization for PC main memory applications Fast access and cycle time 50 ns access ...a 32 MByte DRAM module organized as 8 388 608 words by 32-bit in a 72-pin single-in-line package com...
Description 8M x 32 Bit DRAM Module
8M x 32-Bit Dynamic RAM Module 8M X 32 FAST PAGE DRAM MODULE, 50 ns, SMA72
8M x 32-Bit Dynamic RAM Module 8M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72

File Size 52.29K  /  10 Page

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    SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM368025GS-60 HYM368025GS-50 HYM368025S-60 HYM368025S-50 HYM368025S
OCR Text 60 * SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications Fast access and cycle time ...a 32 MByte DRAM module organized as 8 388 608 words by 36Bit in two banks in a 72-pin single-in-line...
Description 8M x 36-Bit EDO - DRAM Module
8M x 36 Bit EDO DRAM Module with Parity

File Size 103.50K  /  10 Page

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