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5TRPB EBT156 IRFY310 0NF1AA2 U5001 T301495 AT110 LN145W
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  56mm. Datasheet PDF File

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    IRF[International Rectifier]
Part No. IRGMC30F
OCR Text ...1 IC = 12A --- IC = 23A See Fig.5 V --- IC = 12A , TJ = 125C 5.5 VCE = VGE, IC = 250 A --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = 1...6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) 670 --- VGE = 0V 100 --- pF ...
Description INSULATED GATE BIPOLAR TRANSISTOR

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    IRF[International Rectifier]
Part No. IRGMC30U
OCR Text ... IC = 8.0A --- IC = 17A See Fig.5 V --- IC = 8.0A , TJ = 125C 5.5 VCE = VGE, IC = 250 A --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = ...6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) 660 --- VGE = 0V 100 --- pF ...
Description 600V DISCRETE Hi-Rel IGBT in a TO-254AA package
INSULATED GATE BIPOLAR TRANSISTOR

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    IRF[International Rectifier]
Part No. IRH9230
OCR Text ...4 Pre-Radiation IRH9230 -6.5 -4.1 -26 75 0.2 20 330 -6.5 7.5 -5.0 -55 to 150 oC Units A W W/K V mJ A mJ V/ns 300 (0.063 in. (1 .6mm) from case for 10s) 11.5 (typical) g To Order Previous Datasheet IRH9230 Device I...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

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    IRF[International Rectifier]
Part No. IRH9250
OCR Text ...l radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier's P-Channel RAD...6mm) from case for 10s) 11.5 (typical) g To Order Previous Datasheet IRH9250 Device Ind...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

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    IRF[International Rectifier]
Part No. IRH93130 IRH9130
OCR Text ...11 -7.0 -44 75 0.6 20 190 -11 7.5 -10 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical ) For footnotes refer to the last page www.irf.com 1 02/1...
Description -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

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    IRF[International Rectifier]
Part No. IRH93150 IRH9150
OCR Text ...22 -14 -88 150 1.2 20 500 -22 1.5 -23 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical ) www.irf.com 1 02/18/03 IRH9150 Pre-Irradiation El...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)

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    IRF[International Rectifier]
Part No. IRHE8110 IRHE7110
OCR Text ...Range Lead Temperature Weight 3.5 2.2 14 15 0.12 20 68 5.5 -55 to 150 Pre-Irradiation IRHE7130, IRHE8130 Units A W W/C V mJ V/ns o C g 300 (0.063 in. (1.6mm) from case for 10s) 0.42 (typical) www.irf.com 1 10/14/98 ...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

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    IRF[International Rectifier]
Part No. IRHF57133SE JANSR2N7497T2
OCR Text ...NNEL REF: MIL-PRF-19500/706 5 TECHNOLOGY Product Summary Part Number IRHF57133SE Radiation Level RDS(on) ID 100K Rads (Si) 0....6mm from case for 10s) 0.98 (Typical) www.irf.com 1 06/16/04 IRHF57133SE, JANSR2N7497T2 ...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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    IRF[International Rectifier]
Part No. IRHF57214SE
OCR Text ... IRHF57214SE 250V, N-CHANNEL 5 TECHNOLOGY International Rectifier's R5TM technology provides high performance power MOSFETs for spac...6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 06/05/07 IRHF57214SE Pre-Irrad...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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    IRF[International Rectifier]
Part No. IRHF597110 IRHF593110
OCR Text ...-1.6 -10.4 15 0.12 20 30 -2.6 1.5 6.6 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C 300 (0.063 in./1.6mm from case for 10s) 0.98 (Typical) g www.irf.com 1 12/03/03 IRHF597110 Pre-Irradiation ...
Description -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

File Size 130.63K  /  8 Page

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