500v-0.22-20a- pdf Datasheet P4 Full Text Search --- IC-ON-LINE


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500v-0.22-20a- Datasheet PDF File

For 500v-0.22-20a- Found Datasheets File :: 290 Search Time::2.672ms
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				Siemens Semiconductor G... Siemens Semiconductor Group Infineon SIEMENS AG
Part No.	IL251 IL250 IL252 ILD252 ILD250 ILD251
OCR Text	...m min. Isolation Resistance VIO=500V, TA=25C .................................. 1012 VIO=500V, TA=100C ................................ 101...0.80) .035 (0.90) .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) typ. .300 (7.62) .347 (8.82) ....
Description	From old datasheet system BIDIRECTIONAL INPUT OPTOCOUPLER
File Size	76.42K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGIB10B60KD1 IRGIB10B60KD1P IRGIB10B60KD1PBF
OCR Text	...= 150C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 50 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 10A, L = 1.07mH VGE = 15V, RG = 50 di/dt = 500A/s s A J ns A nC Vcc =80% (VCES), VGE = 2...
Description	600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	383.42K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STW20NC50 7201
OCR Text	500V - 0.22 - 18.4A TO-247 PowerMeshTMII MOSFET TYPE STW20NC50 s s s s s VDSS 500V RDS(on) < 0.27 ID 18.4A TYPICAL RDS(on) = 0.22 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MIN...
Description	N-CHANNEL 500V - 0.22 OHM 18.4A TO-247 POWERMESH II MOSFET N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 500V - 0.22 OHM 18.4A TO-247 POWERMESH II MOSFET N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh?II MOSFET
File Size	248.29K / 8 Page	View it Online	Download Datasheet

				IR International Rectifier
Part No.	IRFB20N50K IRFB20N50KPBF
OCR Text	...HEXFET(R) Power MOSFET VDSS 500V RDS(on) typ. 0.21 ID 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche ...
Description	20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SMPS MOSFET HEXFET? Power MOSFET 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	113.37K / 8 Page	View it Online	Download Datasheet

				Vishay Semiconductors International Rectifier
Part No.	ST2600C..RSERIES 2680 ST2600C22R0 ST2600C24R0 ST2600C28R0 ST2600C20R0 ST2600C26R0 ST2600C30R0
OCR Text	... - Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection) Outline Table 112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. TWO PLACES 3 7.7 (1.5 ) M A X . GATE 1.5 (0.06) DIA. ANODE HOLE 1.5 (0.06) DI...
Description	Silicon Controlled Rectifier, 4800 A, 2200 V, SCR, RPUK-2 Silicon Controlled Rectifier, 4800 A, 2800 V, SCR, RPUK-2 PHASE CONTROL THYRISTORS From old datasheet system 2200V 2220A Phase Control SCR in a A-36 (R-Puk) package 2400V 2220A Phase Control SCR in a A-36 (R-Puk) package 2800V 2220A Phase Control SCR in a A-36 (R-Puk) package 2000V 2220A Phase Control SCR in a A-36 (R-Puk) package 2600V 2220A Phase Control SCR in a A-36 (R-Puk) package 3000V 2220A Phase Control SCR in a A-36 (R-Puk) package
File Size	67.98K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RM10TA-24 RM10TA-2H
OCR Text	... grease applied Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- -- 10 Typ. -- -- -- -- -- Max. 2.0 1.25 1.0 0.1 -- Unit mA V C/ W C/ W M Feb.1999 MITSUBISHI DIODE MODULES RM10TA-24,-2H ...
Description	122 x 32 pixel format, LED or EL Backlight available HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	75.50K / 3 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RM10TA-H RM10TA-M
OCR Text	... grease applied Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- -- 10 Typ. -- -- -- -- -- Max. 1.5 1.07 1.0 0.1 -- Unit mA V C/ W C/ W M Feb.1999 MITSUBISHI DIODE MODULES RM10TA-M,-H M...
Description	MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	42.87K / 3 Page	View it Online	Download Datasheet

				Vishay Semiconductors International Rectifier
Part No.	ST203SSERIES 2674 ST203S10PFJ0 ST203S12PFJ0 ST203S10PFJ1
OCR Text	... 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) *Standard part number. All other types availa...0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA. (0 .3 9 .5 MI N. 4.3 (0.17) DIA. 7) RED SILICON R...
Description	Silicon Controlled Rectifier, 320 A, 1000 V, SCR, TO-209AB 1200V 320A Inverter Thyristor in a TO-209AB (TO-93) package 1000V 320A Inverter Thyristor in a TO-209AB (TO-93) package From old datasheet system INVERTER GRADE THYRISTORS Stratix II GX FPGA 130K FPGA-40 1000V20逆变晶闸管采用TO - 209AB（到93）封
File Size	119.91K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW40T120 Q67040-S4519 GW40T120
OCR Text	... 100C 150C 0mJ 400V 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a fun...0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16....
Description	From old datasheet system Low Loss IGBT in Trench and Fieldstop technology IGBTs & DuoPacks - 40A 1200V TO247 IGBT
File Size	407.11K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS35N50L
OCR Text	...and Server Power Supplies 0.125 500V * Uninterruptible Power Supplies * Motor Control applications Features and Benefits * SuperFast body diode eliminates the need for external diodes in ZVS applications. * Lower Gate charge results in simp...
Description	30V N-Channel PowerTrench MOSFET HEXFETPower MOSFET HEXFET Power MOSFET
File Size	151.24K / 8 Page	View it Online	Download Datasheet

For 500v-0.22-20a- Found Datasheets File :: 290 Search Time::2.672ms
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