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Infineon
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Part No. |
BUZ100S-4
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OCR Text |
4
SIPMOS (R) Power Transistor
* Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated
Type BUZ 100S-4
VDS
55 V
ID
...6
mJ
ID = 8 A, VDD = 25 V, RGS = 25 L = 11.8 mH, Tj = 25 C
Reverse diode dv/dt kV/s
IS = ... |
Description |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor
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File Size |
89.37K /
8 Page |
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it Online |
Download Datasheet
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Powerex, Inc. Mitsubishi Electric Corporation
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Part No. |
FK16SM-6
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OCR Text |
4.5 1.5 f 3.2 5.0 20.0 19.5min. 2 1.0 5.45 4.4 0.6 2.8 qwe 5.45 2 4 4 r wr q e q gate w drain e source r drain v dss ................................................................................ 300v r ds (on) (max) ................. |
Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 16 A, 300 V, 0.41 ohm, N-CHANNEL, Si, POWER, MOSFET MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
63.59K /
5 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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Part No. |
FS16VS-6
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OCR Text |
...
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0
+0.3 -0
1 5 0.8 0.5
qwe wr
2.6 0.4
q
VDSS ............................................................................... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
46.64K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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