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INTERSIL[Intersil Corporation]
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Part No. |
HGTG40N60A4 FN4782
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...390V, RG = 2.2, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.2 80 12 1200
10 ISC 8
1000
... |
Description |
600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT From old datasheet system
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File Size |
92.45K /
8 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
HGTG20N60A4D FN4790 HGTG20N60A4
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 IEC = 20A TYP 1.8 1.6 5.5 8.6 142 182 15 1... |
Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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File Size |
349.40K /
9 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
HGTP20N60A4 HGTG20N60A4 FN4781
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...390V VGE =15V RG = 3 L = 500H Test Circuit (Figure 20)
2
HGTG20N60A4, HGTP20N60A4
Electrical ... |
Description |
600V/ SMPS Series N-Channel IGBTs 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBTs From old datasheet system
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File Size |
352.12K /
9 Page |
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APEX
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Part No. |
PA90
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OCR Text |
...N
GAIN 1 5 10 30 Cc* 68pF 10pF 4.7pF NONE Rc 100 100 0 0
4 CC1
1 -IN
R5 R8 R9
R6
*Cc To be rated for the full supply voltage +V to -Vs. Use NPO ceramic (COG) type.
EXTERNAL CONNECTIONS
Q14 R10
1 2 3 4 5 6 7 8 9 10 11 12... |
Description |
High Voltage Power Op Amp From old datasheet system
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File Size |
54.59K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9K1560G ISL9K1560G3
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OCR Text |
..., VR = 390V, TC = 125C 25 35 29.4 3.5 57 90 2.0 5.0 275 52 1.36 13.5 390 800 30 40 A nC A/s A nC ns ns ns ns A nC ns
Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 1.0 3... |
Description |
15A, 600V Stealth Dual Diode 15A 600V Stealth Dual Diode 15A, 600V Stealth⑩ Dual Diode
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File Size |
117.30K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
ISL9K3060G ISL9K3060G3 ISL9K3060G3NL
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OCR Text |
...0A TC = 25C TC = 125C 2.1 1.7 2.4 2.1 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 120 pF
Switching Characte...390V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR = 390V... |
Description |
30A, 600V Stealth?/a> Dual Diode 30A, 600V Stealth Dual Diode 30A, 600V Stealth??Dual Diode 30A 600V Stealth Dual Diode 30A, 600V Stealth⑩ Dual Diode
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File Size |
114.35K /
6 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
HGTP3N60A4D HGT1S3N60A4DS FN4818
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OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...390V, VGE = 15V, RG = 50, L = 1mH, Test Circuit (Figure 24)
2
HGT1S3N60A4DS, HGTP3N60A4D
Elec... |
Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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File Size |
129.16K /
10 Page |
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ST
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Part No. |
STGW40NC6 STGW40NC60WD
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OCR Text |
.... . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7...390V, IC = 20A, VGE = 15V, (see Figure 16) Vclamp = 480V , Tj = 150C RG = 10, VGE= 15V
nC nC nC A... |
Description |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
Using the latest high voltage technology based on
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File Size |
257.97K /
14 Page |
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![ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL9R860S3STNL](Maker_logo/fairchild_semiconductor.GIF)
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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Part No. |
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL9R860S3STNL
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OCR Text |
...8A TC = 25C TC = 125C 2.0 1.6 2.4 2.0 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 30 pF
Switching Character...390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, T... |
Description |
8A, 600V Stealth Single Diode 8A, 600V Stealth Diode 8A, 600V Stealth⑩ Diode 8A, 600V StealthDiode
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File Size |
98.14K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor] SAMSUNG[Samsung semiconductor] Fairchild Semiconductor Corporation SAMSUNG SEMICONDUCTOR CO. LTD. Fairchild Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
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Part No. |
ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD.-ISL9860PF2 R860PF2 ISL9R860PF2NL
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OCR Text |
...8A TC = 25C TC = 125C 2.0 1.6 2.4 2.0 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 30 pF
Switching Character...390V, TC = 25C IF = 8A, dIF/dt = 200A/s, VR = 390V, TC = 125C IF = 8A, dIF/dt = 600A/s, VR = 390V, T... |
Description |
8A, 600V Stealth⑩ Diode 8A 600V Stealth Diode 8A, 600V Stealth Diode 8A条,600V的隐形二极管
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File Size |
113.22K /
6 Page |
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it Online |
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