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IXYS[IXYS Corporation]
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| Part No. |
IXsH20N60U1 IXsH20N60AU1
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| OCR Text |
...RM
Fig.15
4
TJ = 100C VR = 350v
Reverse Recovery Chargee
Qr - nanocoulombs
Normalized IRM /Qr
3
IF = 30A
max.
2
typ...s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350v IF = 30A
max.
Fig.17
0.8
IF... |
| Description |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
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| File Size |
112.59K /
6 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXsH30N60U1 IXsH30N60AU1
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| OCR Text |
...very Chargee
4
TJ = 100C VR = 350v IF = 30A
max.
Qr - nanocoulombs
Normalized IRM /Qr
3
2
typ. IF = 60A
0.6 0.4 0.2 0.0 0...s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350v IF = 30A
max.
Fig.17 Reverse ... |
| Description |
From old datasheet system
Low VCE(sat) IGBT with Diode High speed IGBT with Diode Combi Packs short Circuit sOA Capability
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| File Size |
81.50K /
6 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXsK50N60AU1
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| OCR Text |
...s
4 I = 60A F 3 2 1
V R = 350v
0.6 0.4 0.2 0.0 0 40 80 120 160
Qr
0 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
80
TJ = 100C VR = 350v
Fig.17
800
Reverse Recovery Time
T ... |
| Description |
IGBT with Diode
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| File Size |
94.99K /
6 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXsX50N60AU1s IXsX50N60AU1
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| OCR Text |
...bs
4 I = 60A F 3 2 1
VR = 350v
0.6 0.4 0.2 0.0 0 40 80 120 160
Qr
0 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
80
T J = 100C VR = 350v
Fig.17 Reverse Recovery Time
800
TJ = 1... |
| Description |
IGBT with Diode Combi Pack - short Circuit sOA Capability
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| File Size |
135.85K /
5 Page |
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it Online |
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SIEMENS AG
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| Part No. |
sPP07N60s5
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| OCR Text |
...urn-on delay time t d(on) v dd =350v, v gs =10v, i d =7.3a, r g =12 w - 120 - ns rise time t r - 40 - turn-off delay time t d(off) - 170...s t c =25c - - 7.3 a inverse diode direct current,pulsed i sm - - 14.6 inverse diode forward voltag... |
| Description |
Cool MOs Power-Transistor(Cool MOs 功率晶体 酷MOs功率晶体管（酷马鞍山功率晶体管）
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| File Size |
112.45K /
9 Page |
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it Online |
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Intersil, Corp.
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| Part No. |
HGTP8P50G1
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| OCR Text |
...soa at t c = +25 o c, v cl = -350v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ssoa no snubber, figure 17 - circuit 1 . . ...s, duty cycle < 0.5%, v ce = -10v 0 -4 -8 -12 -16 -20 i ce , collector-emitter current (a) -4 -6 -8... |
| Description |
8A, 500V P-Channel IGBTs 8A条，500V P沟道IGBT
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| File Size |
112.84K /
9 Page |
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it Online |
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Price and Availability
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