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  30v s Datasheet PDF File

For 30v s Found Datasheets File :: 28086    Search Time::4.734ms    
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    IRG4BC30U-S

International Rectifier, Corp.
Part No. IRG4BC30U-s
OCR Text ...put capacitance 73 pf v cc = 30v see fig.7 c res reverse transfer capacitance 14 ? = 1.0mhz parameter min. typ. max. units condition...s v ce = 100v, i c = 12a 250 v ge = 0v, v ce = 600v 2.0 v ge = 0v, v ce = 10v, t j = 25c...
Description INsULATED GATE BIPOLAR TRANsIsTOR UltraFast speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCEs和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

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    ELM13405CA-S

ELM Technology Corporation
Part No. ELM13405CA-s
OCR Text ...d low gate resistance. ? vds=-30v ? id=-2.6a (vgs=-10v) ? rds(on) < 130m (vgs=-10v) ? rds(on) < 180m (vgs=-4.5v) 4 - pin configuration circuit single p-channel mosfet s g d sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2...
Description single P-channel MOsFET

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    ELM13406CA-S

ELM Technology Corporation
Part No. ELM13406CA-s
OCR Text ...d low gate resistance. ? vds=30v ? id=3.6a (vgs=10v) ? rds(on) < 65m (vgs=10v) ? rds(on) < 105m (vgs=4.5v) pin configuration circuit sot-23(top view) pin no. pin name 1 gate 2 source 3 drain s g d 1 2 3 4 - single n-channel mosfet ...
Description single N-channel MOsFET

File Size 332.08K  /  4 Page

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    ELM13407CA-S

ELM Technology Corporation
Part No. ELM13407CA-s
OCR Text ...d low gate resistance. ? vds=-30v ? id=-4.1a (vgs=-10v) ? rds(on) < 52m (vgs=-10v) ? rds(on) < 87m (vgs=-4.5v) 4 - pin configuration circuit single p-channel mosfet s g d sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2 3...
Description single P-channel MOsFET

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    ELM13409CA-S

ELM Technology Corporation
Part No. ELM13409CA-s
OCR Text ...d low gate resistance. ? vds=-30v ? id=-2.6a (vgs=-10v) ? rds(on) < 130m (vgs=-10v) ? rds(on) < 200m (vgs=-4.5v) 4 - pin configuration circuit s g d sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2 3 single p-channel mosf...
Description single P-channel MOsFET

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    IRGBC20M-S

International Rectifier
Part No. IRGBC20M-s
OCR Text ...t capacitance ? 47 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 4.8 ? ? = 1.0mhz pa...s v ce = 100v, i c = 8.0a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = ...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

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    IRG4BC15UD-S

International Rectifier
Part No. IRG4BC15UD-s
OCR Text ...pacitance ??? 37 ??? pf v cc = 30v c res reverse transfer capacitance ??? 5.3 ??? ? = 1.0mhz t rr diode reverse recovery time ??? 28 42 ns...s di (rec)m /dt diode peak rate of fall of recovery ??? 280 ??? a/s t j = 25 c during t b ??? 240 ...
Description (IRG4BC15UD-L/-s) INsULATED GATE BIPOLAR TRANsIsTOR

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    AUIRG4BC30S-S AUIRG4BC30S-SL

International Rectifier
Part No. AUIRG4BC30s-s AUIRG4BC30s-sL
OCR Text ...t capacitance ? 72 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 13 ? ? = 1.0mhz switching characteristics @ t j = ...s) passed automotive qualification. ir?s industrial and consumer qualification level is granted b...
Description INsULATED GATE BIPOLAR TRANsIsTOR

File Size 301.87K  /  13 Page

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    IRG4BC20SD-S

International Rectifier
Part No. IRG4BC20sD-s
OCR Text ...put capacitance 39 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 7.1 ? = 1.0mhz t rr diode reverse recovery time 37...s t j = 25c see fig. during t b 210 t j = 125c 17 par...
Description 600V DC-1 kHz (standard) Copack IGBT in a D2-Pak package

File Size 392.93K  /  10 Page

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    IRG4BC20UD-S

International Rectifier
Part No. IRG4BC20UD-s
OCR Text ...pacitance CCC 39 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 7.4 CCC ? = 1.0mhz t rr diode reverse recovery ti...s di (rec)m /dt diode peak rate of fall of recovery CCC 240 CCC a/s t j = 25c see fig. during t...
Description 600V UltraFast 8-60 kHz Copack IGBT in a D2-Pak package

File Size 243.85K  /  11 Page

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