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  3.4v 29.5dbm Datasheet PDF File

For 3.4v 29.5dbm Found Datasheets File :: 112    Search Time::1.391ms    
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    AMMC-6232

AVAGO TECHNOLOGIES LIMITED
Part No. AMMC-6232
OCR Text ...Bias Voltage Thermal Resistance(3) Symbol Idd Vd Ig Vg jc Unit mA V mA V C/W -.3 3 Min Typ 35 4 0. -0.95 35. -0.55 Max 50 5 (2) Ambient o...4V, Idd=135mA, Zin = Zout = 50 , on-wafer unless noted) 40 30 20 10 0 15 20 25 30 35 Frequency (GHz...
Description 18 to 32 GHz GaAs High Linearity Low Noise Amplifier

File Size 1,390.04K  /  8 Page

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    SA621DH SA621

PHILIPS[Philips Semiconductors]
Part No. SA621DH SA621
OCR Text ...ONFIGURATION PD1 1 PD2 2 GND 3 LO OUT 4 GND 5 GND 6 TANK 7 GND 8 GND 9 BYPASS 10 20 MIXER OUT 19 MIXER OUT 18 GND 17 MIXER IN 16 GND 1...4V Enable = 2.4V 1.2 2.0 -0.3 10 10 MIN TYP 13.3 10 5.7 20 1.6 1.8 VCC 0.8 MAX UNITS mA mA mA A V V ...
Description From old datasheet system
1GHz - Low voltage LNA, mixer and VCO

File Size 119.10K  /  16 Page

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    EFA080A-70

Electronic Theatre Controls, Inc.
Excelics Semiconductor, Inc.
ETC
List of Unclassifed Manufacturers
Part No. EFA080A-70
OCR Text ...B TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH PO...4V Vgs Drain Current Idss 185mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 22dBm @ 3dB Compr...
Description Low Distortion GaAs Power FET

File Size 18.68K  /  2 Page

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    TQM71302406

TriQuint Semiconductor
Part No. TQM71302406
OCR Text ...Test Conditions CDMA Mode: VCC1=3.4vDC, VCC2=3.4vDC, VREF =2.85VDC, Tc=25C 2 3 4 8-Pin 3.0x3.0mm Plastic Module Package Top View (X-ra...4V; Vref=2.85V; Temp=25oC 34 7 38 9 -137 -134 dBm/Hz % Gain4 Vcc=3.4v; Vref =2.85V; -300C<Temp<850C ...
Description 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module

File Size 402.70K  /  14 Page

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    TQM713024

TriQuint Semiconductor
Part No. TQM713024
OCR Text ...PS phones Package Style 1 2 3 4 8 7 6 5 Electrical Specifications Parameter Frequency CDMA mode maximum Pout1 CDMA ACPR1 (@ 885kHz O...4V; Vref=2.85V; Temp=25oC 34 7 39 9 -137 -134 dBm/Hz % +16dBm Pout +28dBm Pout +16dBm (ACPR1)2 Vc...
Description 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module

File Size 369.25K  /  12 Page

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    TQM7136

TriQuint Semiconductor
Part No. TQM7136
OCR Text ...Test Conditions CDMA Mode: VCC1=3.4vDC, VCC2=3.4vDC, VREF =2.85VDC, VCTRL1=1.7VDC, VCTRL2 =1.7VDC, Tc=25C, Pout = 28.0dBm Note 2: Test Condi...4V 4.2V 30 30 25 824 836.5 Frequency (MHz) 849 25 824 836.5 Frequency (MHz) ACPR vs. Vcc...
Description 3V HBT SiGe CDMA POWER AMPLIFIER MODULE

File Size 93.91K  /  16 Page

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    FSX017X

Eudyna Devices Inc
Part No. FSX017X
OCR Text ...y with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Te...4V -0.6V -0.8V -1.0V -1.2V 8 10 0 50 100 150 200 Case Temperature (C) Drain-Sou...
Description GaAs FET & HEMT Chips

File Size 85.55K  /  4 Page

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    FMM5804VY

Eudyna Devices Inc
Part No. FMM5804VY
OCR Text ... VDD VGG Pin Tstg Rating 10 -3 16 -55 ~ +125 Unit V V dBm o C RECOMMENDED OPERATING CONDITIONS Item Symbol Drain Voltage VDD Input ...4V 5V 6V Pout f=24.0GHz, IDD(DC)=250mA 750 700 650 600 550 500 450 400 350 300 250 200 150 28 26...
Description K / Ka Band Power Amplifier MMIC

File Size 281.41K  /  14 Page

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    ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
Part No. AWT6252M7P8 AWT6252
OCR Text 3.4v/27.5dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES * * * * * * * InGaP HBT Technology High Efficiency: 39% Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 A VREF = +2.85 V (+2.75 ...
Description IMT/WCDMA 3.4v/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.

File Size 149.89K  /  8 Page

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    http://
UMS[United Monolithic Semiconductors]
Part No. CHA3063-99F_00 CHA3063 CHA3063-99F/00
OCR Text ...turated Output Power (Pin=0dBm) 3 rd order intercept(2) Input VSWR Output VSWR Noise figure Min 5.5 18 Typ Max 23 Unit GHz dB...4V, Vg = -0.27V, Id = 160 mA. CHA3063 Typical Scattering Parameters ( On wafer Sij measurement...
Description 5.5-23GHz Driver Amplifier

File Size 153.05K  /  7 Page

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For 3.4v 29.5dbm Found Datasheets File :: 112    Search Time::1.391ms    
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