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MACOM[Tyco Electronics]
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| Part No. |
SMA66-3 A66-3
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| OCR Text |
3/SMA66-3
10 TO 1000 MHz CASCADABLE AMPLIFIER * HIGH GAIN - TWO STAGES: 26.0 dB (TYP.) * LOW NOISE: <3.0 dB (TYP.) * HIGH EFFICIENCY: 16 mA...Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc
170C/W 0.016 W 3C
Out... |
| Description |
10 TO 1000 MHz CASCADABLE AMPLIFIER
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| File Size |
108.18K /
1 Page |
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MACOM[Tyco Electronics]
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| Part No. |
SMA75-3 A75-3
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| OCR Text |
3/SMA75-3
10 TO 500 MHz CASCADABLE AMPLIFIER * HIGH GAIN: 20.5 dB (TYP.) * LOW NOISE: 1.7 dB (TYP.)
Typical Performance @ 25C
Specifica...Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc
170C/W 0.099 W 17C
Ou... |
| Description |
10 TO 500 MHz CASCADABLE AMPLIFIER
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| File Size |
95.99K /
1 Page |
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ASI[Advanced Semiconductor]
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| Part No. |
MRAL2023-3
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| OCR Text |
3
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRAL2023-3 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
FEATURES INCLUDE:
* Gold Metallization... |
| Description |
NPN SILICON RF POWER TRANSISTOR
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| File Size |
13.39K /
1 Page |
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MICROWAVE TECHNOLOGY INC
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| Part No. |
MWT-H7-3 MWT-H7-8 MWT-H7-13 MWT-H7-6 MWT-H7-2
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| OCR Text |
...nsistor) device whose nominal 0.3 micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium power in the 500 mhz to 28 ghz frequency range. the device is equally effective for either... |
| Description |
KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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| File Size |
104.99K /
2 Page |
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Price and Availability
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