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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M6MGT160S2BVP M6MGB160S2BVP
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OCR Text |
... memory cell. 2M-bits SRAM is a 262144 bytes / 131072 words APPLICATION unsynchronous SRAM fabricated by silicon-gate CMOS technology. Mobile communication products M6MGB/T160S2BVP is suitable for the application of the mobile-communication... |
Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
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File Size |
253.82K /
30 Page |
View
it Online |
Download Datasheet
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Price and Availability
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