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Fuji Electric Holdings Co., Ltd.
http://
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| Part No. |
1MBC03-120
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| OCR Text |
...current i ges v ce =0v v ge = 20v 20 a gate-emitter threshold voltage v ge(th) v ge =20v i c =2.5ma 5.5 8.5 collector-emitter saturation voltage v ce(sat) v ge =15v i c =2.5a 3.5 input capacitance c ies v ge =0v 400 output capacitance c ... |
| Description |
Fuji Discrete Package IGBT 5 A, 1200 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
223.45K /
4 Page |
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Advanced Analogic Technologies, Inc.
ANALOGICTECH[Advanced Analogic Technologies]
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| Part No. |
AAT7357 AAT7357ITS-T1
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| OCR Text |
20v P-Channel Power MOSFET General Description
The AAT7357 is a low threshold dual MOSFET designed for the battery, cell phone, and PDA mar...5a @ 25C Low RDS(ON): * 39 m @ VGS = -4.5V * 63 m @ VGS = -2.5V
Dual TSOPJW-8 Package
Advanced... |
| Description |
20v P-Channel Power MOSFET 20vP沟道功率MOSFET
From old datasheet system
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| File Size |
204.75K /
6 Page |
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it Online |
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Sanyo Electric
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| Part No. |
2SK3254
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| OCR Text |
...10V , ID=5a ID=5a , VGS=10V VDS=20v VDS=20v VDS=20v VDS=200V VGS=10V , , , , f=1MHz f=1MHz f=1MHz ID=5a 500 250 100 3.5 6.3 0.8 880 140 48 30 17 35 100 38 1.5 1.0 V V A A W C C typ max unit V A nA V S pF pF pF nC ns ns ns ns V
(TC=25C)
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| Description |
N-Channel MOS Silicon FET
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| File Size |
64.94K /
1 Page |
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Intersil Corporation
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| Part No. |
IRFF230
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| OCR Text |
...AX , VGS = 10V (Figure 7) VGS = 20v VGS = 10V, ID = 3.0A (Figures 8, 9) VDS >ID(ON) x rDS(ON)MAX, ID = 3.0A (Figure 12) VDD 0.5 x Rated BVDSS, ID 5.5a, RG = 9.1, VGS = 10V, RL = 28.7 For VDSS = 160V, RL = 21.4 For VDSS = 120v (Figures 17,... |
| Description |
5.5a, 200V, 0.400 Ohm, N-Channel Power MOSFET
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| File Size |
325.03K /
7 Page |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
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| OCR Text |
...HEXFET(R) Power MOSFET
VDSS
20v
RDS(on) max
9.0m
ID
77A
High Frequency Buck Converters for Computer Processor Power
Benefi...5a, VGS = 0V TJ = 125C, IS = 35.5a, VGS = 0V TJ = 25C, IF = 35.5a, VR=20v di/dt = 100A/s TJ = 125... |
| Description |
20v Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20v Single N-Channel HEXFET Power MOSFET in a TO-262 package
20v Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20v Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20v, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20v/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20v的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20v V(BR)DSS | 77A I(D) | TO-263AB
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| File Size |
123.62K /
10 Page |
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Intersil Corporation
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| Part No. |
BUZ72A
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| OCR Text |
...5oC, VDS = 100V, VGS = 0V VGS = 20v, VDS = 0V ID = 5a, VGS = 10V (Figure 8) VDS = 25V, ID = 5a (Figure 11) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50, RL = 10 MIN 100 2.1 2.7 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.23 3.8 ... |
| Description |
9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
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| File Size |
44.86K /
6 Page |
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it Online |
Download Datasheet |
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