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For 2-kword Found Datasheets File :: 1437 Search Time::3.484ms
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				HITACHI[Hitachi Semiconductor]
Part No.	HN58V257AT-12 HN58V256A HN58V256AFP-12 HN58V256AT-12
OCR Text	... Features * Single 3 V supply: 2.7 to 5.5 V * Access time: 120 ns max * Power dissipation: Active: 20 mW/MHz, (typ) Standby: 110 W (max) * On-chip latches: address, data, CE, OE, WE * Automatic byte write: 10 ms max * Automatic page writ...
Description	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
File Size	109.98K / 24 Page	View it Online	Download Datasheet

				SST[Silicon Storage Technology, Inc]
Part No.	SST39VF100 SST39VF100-45-4C-B3I SST39VF100-45-4C-B3K SST39VF100-45-4C-WI SST39VF100-45-4C-WK SST39VF100-45-4I-B3I SST39VF100-45-4I-B3K SST39VF100-45-4I-WI SST39VF100-45-4I-WK SST39VF100-70-4C-B3I SST39VF100-70-4C-B3K SST39VF100-70-4C-WI SST39VF100-70-4C-WK SST39VF100-70-4I-B3I SST39VF100-70-4I-B3K SST39VF100-70-4I-WI SST39VF100-70-4I-WK SST39LF100 SST39LF100-45-4C-B3I SST39LF100-45-4C-B3K SST39LF100-45-4C-WI SST39LF100-45-4C-WK SST39LF100-45-4I-B3I SST39LF100-45-4I-B3K SST39LF100-45-4I-WI SST39LF100-45-4I-WK SST39LF100-70-4C-B3I SST39LF100-70-4C-B3K SST39LF100-70-4C-WI SST39LF100-70-4C-WK SST39LF100-70-4I-B3I SST39LF100-70-4I-B3K SST39LF100-70-4I-WI SST39LF100-70-4I-WK
OCR Text	2.7V 1 Mb (x16) MPF memories Data Sheet FEATURES: * Organized as 64K x16 * Single Voltage Read and Write Operations - 3.0-3.6V for SS...KWord sectors * Fast Read Access Time - 45 ns for SST39LF100 - 70 ns for SST39VF100 * Latched Addres...
Description	1 Mbit (64K x16) Multi-Purpose Flash
File Size	247.78K / 22 Page	View it Online	Download Datasheet

				SST[Silicon Storage Technology, Inc] SST[Silicon Storage Technology Inc]
Part No.	SST39VF400A SST39VF400A-45-4C-B3K SST39VF400A-45-4C-EK SST39VF400A-45-4E-B3K SST39VF400A-45-4E-EK SST39VF400A-45-4I-B3K SST39VF400A-45-4I-EK SST39VF400A-55-4C-B3K SST39VF400A-55-4C-EK SST39VF400A-55-4E-B3K SST39VF400A-55-4E-EK SST39VF400A-55-4I-B3K SST39VF400A-55-4I-EK SST39VF400A-70-4C-B3K SST39VF400A-70-4C-EK SST39VF400A-70-4E-B3K SST39VF400A-70-4E-EK SST39VF400A-70-4I-B3K SST39VF400A-70-4I-EK SST39VF400A-90-4C-B3K SST39VF400A-90-4C-EK SST39VF400A-90-4C-U1 SST39VF400A-90-4E-B3K SST39VF400A-90-4E-EK SST39VF400A-90-4I-B3K SST39VF400A-90-4I-EK SST39VF800A SST39VF800A-45-4C-B3K SST39VF800A-45-4C-EK SST39VF800A-45-4E-B3K SST39VF800A-45-4E-EK SST39VF800A-45-4I-B3K SST39VF800A-45-4I-EK SST39VF800A-55-4C-B3K SST39VF800A-55-4C-EK SST39VF800A-55-4E-B3K SST39VF800A-55-4E-EK SST39VF800A-55-4I-B3K SST39VF800A-55-4I-EK SST39VF800A-70-4C-B3K SST39VF800A-70-4C-EK SST39VF800A-70-4E-B3K SST39VF800A-70-4E-EK SST39VF800A-70-4I-B3K SST39VF800A-70-4I-EK SST39VF800A-90-4C-B3K SST39VF800A-90-4C-EK SST39VF800A-90-4C-U1 SST39VF800A-90-4E-B3K SST39VF800A-90-4E-EK SST39VF800A-90-4I-B3K SST39VF800A-90-4I-EK SST39VF200 SST39LF400A SST39LF400A-45-4C-B3K SST39LF400A-45-4C-EK SST39LF400A-45-4E-B3K SST39LF400A-45
OCR Text	2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF...KWord sectors * Block-Erase Capability - Uniform 32 KWord blocks * Fast Read Access Time - 45 and 55...
Description	8 Mbit multi-purpose flash 4 Mbit multi-purpose flash 2 Mbit multi-purpose flash 2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH (SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
File Size	322.16K / 30 Page	View it Online	Download Datasheet

				AMD[Advanced Micro Devices]
Part No.	AM29LV64MU101RPCI AM29LV64MU101RWHI AM29LV640MU90RPCI AM29LV640MU112PCI AM29LV640MU101PCI AM29LV640MU90RWHI AM29LV640MU AM29LV640MU101RPCI AM29LV640MU101RWHI AM29LV640MU101WHI AM29LV640MU112RPCI AM29LV640MU112RWHI AM29LV640MU112WHI AM29LV640MU120PCI AM29LV640MU120RPCI AM29LV640MU120RWHI AM29LV640MU120WHI
OCR Text	...sing hot electron injection. 2 Am29LV640MU June 12, 2003 ADVANCE INFORMATION MIRRORBIT 64 MBIT DEVICE FAMILY Device LV065...Kword) Uniform (32 Kword) Packages 48-pin TSOP (std. & rev. pinout), 63-ball FBGA 48-pin TSOP, 63-ba...
Description	64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with
File Size	703.76K / 58 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
Part No.	M28W160BTT100GB1T M28W160BTT100GB6T M28W160BTT100N1T M28W160BTT100N6T M28W160BTB90GB1T M28W160BTB90GB6T M28W160BTB90N1T M28W160BTB90N6T M28W160B-GBT M28W160BTT90N1T M28W160BTT90N6T M28W160BTT90GB1T M28W160BTT90GB6T M28W160BB
OCR Text	2.7V to 3.6V: for Program, Erase and Read - VDDQ = 1.65V or 2.7V: Input/Output option - VPP = 12V: optional Supply Voltage for fast Program ...KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory ad...
Description	16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory 16 Mbit 1Mb x16/ Boot Block Low Voltage Flash Memory
File Size	276.86K / 39 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc. ETC
Part No.	EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T70RSP EN29LV800T70RT EN29LV800T70RTI EN29LV800T70RTIP EN29LV800T70RTP EN29LV800B70RSP EN29LV800B70RTP EN29LV800B90S EN29LV800B90SP EN29LV800B90TI EN29LV800B90TP EN29LV800
OCR Text	...operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 ...Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword sectors (word mode) - Supports full chip erase...
Description	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
File Size	237.36K / 43 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MBM29PDS322TE10 MBM29PDS322TE10PBT MBM29PDS322TE11 MBM29PDS322TE11PBT MBM29PDS322BE MBM29PDS322BE10 MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11PBT MBM29PDS322TE
OCR Text	...into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This...Kword and sixty-three 32 Kword sectors in word mode Any combination of sectors can be concurrently e...
Description	32M (2M x 16) BIT Page Dual Operation
File Size	225.90K / 66 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	HM628511HC HM628511HCJP-10 HM628511HCLJP-10
OCR Text	...tandby current : 5 mA (max) : 1.2 mA (max) (L-version) * Data retension current: 0.8 mA (max) (L-version) * Data retension voltage: 2 V (min) (L-version) * Center VCC and VSS type pinout Preliminary: The specification of this device are ...
Description	4M High Speed SRAM (512-kword x 8-bit) Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位） 4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
File Size	66.38K / 14 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM628511HI HM628511HJPI-12 HM628511HJPI-15
OCR Text	...ng CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cac...
Description	4M High Speed SRAM (512-kword x 8-bit)
File Size	62.69K / 13 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM628511H HM628511HJP-10 HM628511HJP-12 HM628511HJP-15 HM628511HLJP-10 HM628511HLJP-12 HM628511HLJP-15
OCR Text	...ng CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cac...
Description	4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
File Size	68.50K / 13 Page	View it Online	Download Datasheet

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