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18ghz Datasheet PDF File

For 18ghz Found Datasheets File :: 989 Search Time::3.032ms
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				SIRENZA MICRODEVICES
Part No.	STA-5063Z
OCR Text	...C/W 42 28 25 15 15 19 15.8 14.9 1.5 2.0 30 27 9 52 150 10.5 62 21 17.8 16.9 2.0 2.6 Typ. Max. 6.2 VCC RFOUT * * * * Applications Key Specifications Symbol fO P1dB Parameters: Test Conditions Evaluation Board, Z0 = 50, VCC = ...
Description	3.3 - 6.2 GHz General Purpose 3.3V 15dBm Amplifier
File Size	144.63K / 8 Page	View it Online	Download Datasheet

				http:// AVAGO TECHNOLOGIES LIMITED
Part No.	AMMP-6408 AMMP-6408-TR1G AMMP-6408-TR2G AMMP-6408-BLKG
OCR Text	1 W Power Amplifier in SMT Package Data Sheet Description The AMMP-6408 MMIC is a broadband W power amplifierinasurfacemountpackagede...8GHz Highlylinear:OIP3=38dBm IntegratedRFpowerdetector ESDprotection(50VMM,and250VHBM) Inputportpart...
Description	6 to 18 GHz 1 W Power Amplifier in SMT Package
File Size	464.98K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...d amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maxi...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...d amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maxim...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				Advantech Co., Ltd. http://
Part No.	MIC-5602A2-M2E MIC-5602A2-M4E MIC-56021
OCR Text	...ial-over-LANfunction AMC.0,AMC.1,AMC.2andAMC.3compliant RoHS COMPLIANT 2002/95/EC Introduction TheMIC-5602Rev2isahighlyintegrateds...8GHz) Intel3100 AMI(1.Dualimageswithupdaterollback,2.CMOSsettingscanbechangedoverIPMI,and3.CMOSbacku...
Description	Advanced Mezzanine Card Intel垄莽 45 nm Core垄芒 2 Duo Processor AMC Advanced Mezzanine Card Intel? 45 nm Core?/a> 2 Duo Processor AMC
File Size	352.70K / 2 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1359 BFG19S BFG19
OCR Text	...elecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA * CECC-type available: CECC 50 002/259 ESD: Electrostati...8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V...
Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna) From old datasheet system NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
File Size	49.50K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	... 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	... 1mA to 20mA * fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 182W RGs Q62702-F1492 1=B 2=E 3=C Package SOT-323 Maximum ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking ...8GHz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SBFP420M
OCR Text	... 0.25 * * Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18ghz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 1.6 1 1.3 2.0 2 0.25 ...
Description	UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
File Size	44.73K / 2 Page	View it Online	Download Datasheet

For 18ghz Found Datasheets File :: 989 Search Time::3.032ms
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