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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
M68732L 68732L
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| OCR Text |
...0 430 T VGG=3.5V, VDD=7.2V, Pin=17dbm PO 75 70 65 60 55 50 45 40 35 30 25 440 4 3 2 1 0 -10 -5 0 5 10 15 40 T;400MHz 30 T;430MHz 20 10 0 20 9 8 7 6 5 VGG=3.5V, VDD=7.2V PO;400MHz PO;430MHz OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 90 8... |
| Description |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦，调频便携式收音机
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
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| File Size |
24.60K /
2 Page |
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it Online |
Download Datasheet
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Mitsubishi
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| Part No. |
MGF0921A 0921A
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| OCR Text |
...er Po=33dBm(TYP.) @f=1.9GHz,Pin=17dbm * High power gain Gp=17dB(TYP.) @f=1.9GHz * High power added efficiency hadd=40%(TYP.) @f=1.9GHz,Pin=17dbm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
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| Description |
L & S BAND GaAs FET
From old datasheet system
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| File Size |
85.84K /
3 Page |
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it Online |
Download Datasheet |
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Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
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| Part No. |
MAX2307EBC MAX2307
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| OCR Text |
...T POWER
TA = +25C A = PLOIN = -17dbm B = PLOIN = -11dBm C = PLOIN = -5dBm
MAX2307 toc15
LO LEAKAGE vs. OUTPUT POWER
TA = +85C A = PLOIN = -17dbm B = PLOIN = -11dBm C = PLOIN = -5dBm
MAX2307 toc16
-10 -20 LO LEAKAGE (dBc) -30 -40 -... |
| Description |
Low-Power.Cellular Upconverter-Driver
Low-Power Cellular Upconverter-Driver
" Low-Power, Cellular Upconverter-Driver"
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| File Size |
202.62K /
8 Page |
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it Online |
Download Datasheet |
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