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Advanced Power Electron...
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| Part No. |
AP92U03GMT-HF-16
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| OCR Text |
... ("miller") charge v gs =4.5v - 16 - nc t d(on) turn-on delay time v ds =15v - 12 - ns t r rise time i d =1a - 8 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 48 - ns t f fall time r d =15 - 22 - ns c iss input capacitance v g... |
| Description |
SO-8 Compatible with Heatsink
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| File Size |
48.55K /
5 Page |
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Advanced Power Electron...
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| Part No. |
AP92U03GM-HF-16
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| OCR Text |
...ge drain current, v gs @ 10v 3 16 pulsed drain current 1 80 halogen-free product thermal data parameter total power dissipation 2.5 -55 to ...8 g d s ap92u03 series are from advanced power innovated design and silicon process technology to ac... |
| Description |
Simple Drive Requirement
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| File Size |
48.42K /
5 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP9963GP-HF-16
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| OCR Text |
...mal resistance, junction-case 0.8 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 201408254 thermal data parameter 1 operating junction temperature range -55 to 175 dra... |
| Description |
Fast Switching Characteristic
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| File Size |
99.31K /
5 Page |
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SIEMENS AG
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| Part No. |
HYB39S256160AT
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| OCR Text |
...nous drams organized as 4banks 16 mbit 4, 4 banks 8mbit 8 and 4 banks 4mbit 16 respectively. these synchronous devices achieve high speed data transfer rates for cas -latencies by employing a chip architecture that prefetches multiple... |
| Description |
256-Mbit(4banks × 4mBit × 16) Synchronous DRAM(256M(4× 4m× 16)同步动态RAM)
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| File Size |
287.42K /
42 Page |
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it Online |
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SIEMENS AG
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| Part No. |
HYB39S128160CT HYB39S128800CT
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| OCR Text |
...3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 v dd dq0 a10 a0 a1 a2 a3 v dd v ddq dq1 dq2 v ssq dq3 dq4 v ddq dq5 dq6 v ssq dq7 v dd ldqm... |
| Description |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4mBit × 8) Synchronous DRAM(128M(4× 4m× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
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| File Size |
285.67K /
42 Page |
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Mosel Vitelic, Corp.
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| Part No. |
V16DJX432BLT V16DJ432BLT
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| OCR Text |
... the 4m x 32 memory module uses 16 mosel-vitelic 1m x 8 drams. the x32 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required. device usage chart operating tempe... |
| Description |
4m X 32 High Performance EDO Memory Module(4m X 32高性能EDO存储器模
4m X 32 High Performance FPM Memory Module(4m X 32高性能FPM存储器模
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| File Size |
53.33K /
12 Page |
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Analog Devices, Inc.
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| Part No. |
ADSP-TS203SABP-050
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| OCR Text |
...ing-point data formats and 8-, 16-, 32-, and 64-bit fixed-point data formats integrated i/o includes 10-ch annel dma controller, external port, two link ports, sdram controller, programmable flag pins, two timers, and timer expired pi... |
| Description |
500 MHz TigerSHARC Processor with 4 Mbit on-chip embedded DRAM; Package: 576 ball SBGA; No of Pins: 576; Temperature Range: Ind 32-BIT, 125 MHz, OTHER DSP, PBGA576
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| File Size |
492.87K /
48 Page |
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Price and Availability
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