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100a-ifsm Datasheet PDF File

For 100a-ifsm Found Datasheets File :: 2025 Search Time::1.109ms
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				DYNEX[Dynex Semiconductor]
Part No.	DF25216 DF25210 DF25212 DF25214 DF25208 DF252 DF25206
OCR Text	...Tj = 125oC IF = 750A, diRR/dt = 100A/s Tcase = 125oC, VR = 100V Parameter Conditions At 450A peak, Tcase = 25oC At VRRM, Tcase = 125oC Typ. 3.2 1.5 Max. 1.6 20 35 21 1.0 1.33 50 Units V mA s C A V m V DEFINITION OF K FACTOR AND QRA1 ...
Description	Fast Recovery Diode
File Size	57.98K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRKDS201045P IRKDS201
OCR Text	...65 0.86 V V V V mA mA pF nH V @ 100A @ 200A @ 100A @ 200A TJ = 25 C Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM CT LS VINS ...IFSM (A) 10000 Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics ...
Description	SCHOTTKY RECTIFIER
File Size	131.57K / 6 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD DYNEX[Dynex Semiconductor]
Part No.	NDF65316 NDF653 NDF65310 NDF65312 NDF65314
OCR Text	... IFM = 500A IFM = 200A IFM = 100A 10 1 1 10 100 Rate of rise of reverse current dIR/dt - (A/s) Fig.3 Recovered charge 1000 4/7 NDF653 1000 Conditions: Tj = 125C, VR = 100V IFM = 500A 100 IFM = 200A IFM = 100A ...
Description	Fast Recovery Diode
File Size	57.10K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	201CNQ045PBF
OCR Text	...,000 V V V V mA mA pF nH V/ s @ 100A @ 200A @ 100A @ 200A Conditions TJ = 25 C TJ = 125 C VR = rated VR IRM CT LS Max. Reverse Lea...IFSM (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 10000 1000 10 100 1000 10000...
Description	SCHOTTKY RECTIFIER
File Size	142.50K / 6 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DF45116 DF451 DF45106 DF45108 DF45110 DF45112 DF45114
OCR Text	... 1000A IF = 500A IF = 200A IF = 100A Reverse recovered charge QS - (C) 10 1 1 10 100 Rate of rise of reverse current, dIR/dt - (A/s) 1000 Fig.3 Recovered charge 1000 Conditions: Tj = 125C, VR = 100V IF = 2000A Reverse recov...
Description	Fast Recovery Diode
File Size	56.50K / 8 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM50E3Y-H QM50E2Y-H QM50E2Y
OCR Text	..., Tj=150C IF=50A IF=50A, di/dt=-100A/s, VR=300V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- --...IFSM (A) SURGE FORWARD CURRENT 500 FORWARD CURRENT IF (A) 400 300 200 100 Tj=25C ...
Description	MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	88.52K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	20ETF02S 20ETF02STRL 20ETF02STRR 20ETF06S 20ETF06STRL 20ETF06STRR 20ETF12 20ETF10 20ETF 20ETF04S 20ETF04STRL 20ETF04STRR 20ETF08
OCR Text	...F trr TJ @ 10 A, TJ = 25C @ 1A, 100A/s range Package Outline Units A V A V ns 20ETF..S 20 200 to 600 300 1.2 60 - 40 to 150 D2 Pa...IFSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing 20ETF..S 20 250 ...
Description	SURFACE MOUNTABLE FAST SOFT RECOVERY RECTIFIER DIODE
File Size	200.87K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM75E2Y-2H
OCR Text	... 5 ton, ts, tf (s) 4 IC=100A 10 2 7 5 3 2 10 1 7 5 3 2 ts VCC=600V IB1=-IB2=1.5A Tj=25C Tj=125C 3 IC=75A IC=50A 1 IC=30A...IFSM (A) SURGE FORWARD CURRENT 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.14K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM75E2Y-H
OCR Text	...=1.5A Tj=25C Tj=125C tf 4 IC=100A 3 2 IC=30A SWITCHING TIME 1 Tj=25C Tj=125C IC=75A IC=50A 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 1...IFSM (A) SURGE FORWARD CURRENT 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	75.77K / 6 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	ND421825
OCR Text	...3 VDRM Tj=130C, Gate Open ITM = 100A, VD = 100V TJ = 130C, I T= 250A Re-Applied dV/dt = 20V/s Linear to 0.8 VDRM Tj=25C, VD=12V Tj=25C, VD=12V Tj=130C, VD= 1/2 VDRM A= B= C= D= 500 7 150 (Typical) (Typical) Min. Max. 50 50 1.40 0.877 0.731 ...
Description	POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / 1800 Volts)
File Size	98.29K / 4 Page	View it Online	Download Datasheet

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