100a 1200 pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : F12020 ECG1081A SMAJ33CA C6802 YL2020 C558B 2SC16 75TR50
	Product Description
	Full Text Search

100a 1200 Datasheet PDF File

For 100a 1200 Found Datasheets File :: 5523 Search Time::8.625ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier
Part No.	IRF7807D2
OCR Text	...Is = 7.0A, VDS = 16V nC di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) * Repetitive rating...1200 Ciss Coss 800 2 400 Crss 0 1 10 100 0 0 4 8 12 VDS , Drain-to-Source Volt...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...IF = 8.0A --- 2.0 3.0 C di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF840AS...1200 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1000 VDS L D R IV E R ...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...IF = 8.0A --- 2.0 3.0 C di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF840A ...1200 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 1000 VDS L D R IV E R ...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...= -8.4A --- 650 970 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse wi...1200 C iss 10 800 C oss C rss 5 400 0 1 10 100 A 0 0 10 20 30 FOR TES...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...= -8.4A --- 650 970 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse wi...1200 C iss 10 800 C oss C rss 5 400 0 1 10 100 A 0 0 10 20 30 FOR TES...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...= -11A --- 830 1200 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cyc...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...= -11A --- 830 1200 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -11A, di/dt -470A/s, ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	... = -10A --- 110 160 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse wi...1200 -V G S , G a te -to -S o u rc e V o lta g e (V ) 1000 V GS C is s C rs s C os s = =...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	... = -10A --- 110 160 nC di/dt = -100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating...1200 -V G S , G a te -to -S o u rce V o lta g e (V ) 1000 V GS C is s C rss C oss = 0 V,...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc. Maxim Integrated Produc...
Part No.	MAX3050 MAX3050ASA MAX3050-MAX3057 MAX3057 MAX3057ASA
OCR Text	... GND, VTXD = VCC (MAX3050) I = -100a I = 10mA I = 5mA 6 0.8 VCC 9 V V VOH VOL RI RDIFF 0.8 0.4 5 10 25 100 V k k _____...1200 1600 2000 DATA RATE (kbps) RECEIVER PROPAGATION DELAY vs. TEMPERATURE, RRS = GND MAX3050 to...
Description	±80V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers "?à80V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers" 80V Fault-Protected 2Mbps Low Supply Current CAN Transceivers 【80V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers 80V Fault-Protected / 2Mbps / Low Supply Current CAN Transceivers ??0V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers ±80V Fault-Protected, 2Mbps, Low Supply Current CAN Transceivers
File Size	357.56K / 12 Page	View it Online	Download Datasheet

For 100a 1200 Found Datasheets File :: 5523 Search Time::8.625ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |