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1000 bag Datasheet PDF File

For 1000 bag Found Datasheets File :: 4009 Search Time::4.922ms
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				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STB5NA80 4891
OCR Text	...D = 250 A V GS = 0 Min. 800 250 1000 100 Typ . Max. Un it V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = 30 V ON () Symb ol V G...
Description	N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	130.49K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
Part No.	STB60N03L-10 4892
OCR Text	...I D = 250 A VGS = 0 Min. 30 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 20 V T c = 125 o C ON () Symbol V ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
File Size	86.56K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STB60N06-14 4885
OCR Text	... D = 250 A V GS = 0 Min. 60 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 20 V T c = 125 o C ON () Symbol V G...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 N-CHANNEL Power MOSFET From old datasheet system OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
File Size	85.93K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
Part No.	STB60NE03L-10 5466
OCR Text	... I D =30 A VGS = 0 Min. 25 4000 1000 320 5400 1350 450 Typ . Max. Un it S pF pF pF 2/8 STB60NE03L-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Cha...
Description	N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-CHANNEL Power MOSFET PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
File Size	97.74K / 8 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STK22N06 3121
OCR Text	... D = 250 A VG S = 0 Min. 60 250 1000 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V ...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	182.25K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http://
Part No.	INA-50311 INA-50311-BLK INA-50311-TR1
OCR Text	...e gain block applications up to 1000 MHz. Phase Reference Planes The positions of the reference planes used to measure S-Parameters are show...bag Package Dimensions 0.92 (0.036) 0.78 (0.031) PACKAGE MARKING CODE XXX 1.40 (0.055) 1.20 (...
Description	1 GHz的硅单片低噪声放大器 1 GHz Low Noise Silicon MMIC Amplifier
File Size	55.32K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDS9410 NDS9410A 9410A
OCR Text	... t2 0.1 t1, TIME (sec) 1 10 100 1000 0.1 0.001 0.0001 0.001 0.01 Figure 11. Transient Thermal Response Curve. Thermal characteriza...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description	Single N-Channel Enhancement Mode Field Effect Transistor
File Size	229.54K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDS9945
OCR Text	...al Characteristics (continued) 1000 10 VGS , GATE-SOURCE VOLTAGE (V) I D = 3.5A 8 VDS = 10V 40V CAPACITANCE (pF) 400 30V ...bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comm...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	207.55K / 8 Page	View it Online	Download Datasheet

				RICOH[RICOH electronics devices division] Ricoh Co., Ltd. RICOH COMPANY LTD RICOH electronics devic...
Part No.	RN5RG30AA RN5RG30AA-TL RN5RG30AA-TR RN5RG30AC RN5RG30AC-TL RN5RG30AC-TR RN5RG50AA RN5RG50AA-TL RN5RG50AA-TR RN5RG50AC RN5RG50AC-TL RN5RG50AC-TR RN5RG RN5RG49AC-TR-FB RN5RG49AC-TL-FA RN5RG24AC-TL-FB RG23AC-TL-FA RN5RG24AC-TL-FA
OCR Text	...(at no load) VIN=8V x 0.975 1000 10 -60 100 50 0.01 0.2 VOUT x 1.025 VOUT V mA mA Note 60 200 80 1.0 0.5 mV mV A A A %/V V V ppm/C V IOUT=50mA VOUT+0.5VVIN8V 0 0.1 0.3 8 8 IOUT=10mA -40CTopt85C 1.5 10...
Description	VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR FIXED POSITIVE LDO REGULATOR, PDSO5 SPECIALTY ANALOG CIRCUIT, PDSO5
File Size	122.98K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD17N05L STD17N06L 2975
OCR Text	...06L T c = 125 oC Min. 50 60 250 1000 100 Typ. Max. Unit V V A A nA I DS S IG SS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 15 V ON () Symbol ...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
File Size	171.20K / 10 Page	View it Online	Download Datasheet

For 1000 bag Found Datasheets File :: 4009 Search Time::4.922ms
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