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  1.5a 50v Datasheet PDF File

For 1.5a 50v Found Datasheets File :: 8722    Search Time::2.016ms    
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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...C I 0.5 A B Base Current Peak I 1 A BP Total Transistor DissipationTc = 25*Z P 50 W T Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 ...5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...C I 0.5 A B Base Current Peak I 1 A BP Total Transistor DissipationTc = 25*Z P 50 W T Mounting Torque TOR (Recommended torque : 0.3Nm*j 0.5 ...5A Min 1,500 FE CE C Max 30,000 Collector to Emitter Saturation 5A V (sat) I = Voltage Max 1.5V CE C...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ...gs -55+150 +150 100 100 7 15 22 1 2 100 0.8 Ratings Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.25 TYP 20 Max 2 Max 5 M...5A IC = 15A IB1 = IB2 = 20mA RL = 2 VBB2 = 4V VCE(sat) VBE(sat) jc fT ton ts tf V V /W MHz ...
Description Darlington Transistor(15A NPN)

File Size 405.96K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ...gs -55+150 +150 200 200 7 15 22 1 2 100 0.8 Ratings Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.25 TYP 20 Max 2 Max 8 M...5A IC = 10A IB1 = IB2 = 30mA RL = 3 VBB2 = 4V VCE(sat) VBE(sat) jc fT ton ts tf V V /W MHz ...
Description Darlington Transistor(15A NPN)

File Size 456.51K  /  10 Page

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    2SD958

PANASONIC[Panasonic Semiconductor]
Part No. 2SD958
OCR Text ...n Complementary to 2SB788 6.90.1 0.4 Unit: mm 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q q 1.5 1.5 R0.9 R0.9 0...5A 200 100 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 3...
Description Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)

File Size 36.40K  /  2 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text 1 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 10 Q6 D6 Q5 D5 16 IGBT SIP MODULE Features * Short Circuit Rated UltraFast: Optimized for hi...5A 5 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 ...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text 1 DS4642 -6.0 July 2001 FEATURES s Double Side Cooling s High Surge Capability s High Mean Current KEY PARAMETERS VDRM IT(AV) ITSM dV...5A tr = 0.5s, Tj = 125oC At Tvj = 125oC At Tvj = 125oC VD = 67% VDRM, Gate source 30V, 15 tr = 0.5s,...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...GE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2208.3 5-1 IRF234, I...
Description 8.1A and 6.5A/ 275V and 250v/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250v, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitanc...5A 1.9A Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 60 40 15V V(BR)DSS tp ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...50 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...5A 12A VD S L D R IV E R 600 RG 20V D .U .T IA S tp + - VD D A 0 .0 1 ...
Description Power MOSFET(Vdss=150v Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150v, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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