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.9mh Datasheet PDF File

For .9mh Found Datasheets File :: 336 Search Time::1.797ms
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				International Rectifier
Part No.	IRL540N
OCR Text	... 11 ) Starting TJ = 25C, L = 1.9mh RG = 25, IAS = 18A. (See Figure 12) . ISD 18A, di/dt 180A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2% TJ 175C IRL540N 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 1000...
Description	HEXFET? POWER MOSFET
File Size	125.77K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT1201R4B APT1201R4S APT1201R4SLL APT1201R4BLL
OCR Text	...471 4 Starting T = +25C, L = 29.9mh, R = 25W, Peak I = 9A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, ...
Description	Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
File Size	56.70K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRHE7230 IRHE8230 IRHE3230 IRHE4230 JANSF2N7262U JANSR2N7262U JANSG2N7262U JANSH2N7262U IRHE7130
OCR Text	...= 25V, starting TJ = 25C, L= 15.9mh Peak IL = 5.5A, VGS = 12V ISD 5.5A, di/dt 120A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation p...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 200000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 20000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
File Size	267.95K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7230 JANSF2N7262 IRHF8230 JANSR2N7262 JANSG2N7262 JANSH2N7262
OCR Text	...= 25V, starting TJ = 25C, L= 15.9mh Peak IL = 5.5A, VGS = 12V ISD 5.5A, di/dt 120A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation p...
Description	RADIATION HARDENED POWER MOSFET 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
File Size	277.69K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SFH9250L
OCR Text	...ximum Junction Temperature L=3.9mh, IAS=-19.5A, VDD=-50V, RG=27, Starting TJ =25 ISD-19.5A, di/dt500A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width 300s, Duty Cycle 2% Essentially Independent of Operating Temperature P-CHA...
Description	Advanced Power MOSFET
File Size	544.10K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK2375
OCR Text	...* TC = 25C Ta = 25C L = 1.9mh, IL = 8A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Sou...
Description	Silicon N-Channel Power F-MOS FET
File Size	37.02K / 2 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF17P10
OCR Text	...m junction temperature 2. L = 7.9mh, IAS = -10.5A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -16.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operatin...
Description	100V P-Channel MOSFET
File Size	663.08K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL3215 2248
OCR Text	...-4 Starting TJ = 25C, L = 4.9mh RG = 25, IAS = 7.2A. (See Figure 12) ISD 7.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRL3215 10 VGS VGS 15V 15V 10V 10V 8.0V 5V 7.0V 4.5V 6.0V 3.5V 5.5V 3V 5.0V 2.75V BOTT...
Description	HEXFET Power MOSFET From old datasheet system HEXFET? Power MOSFET
File Size	122.85K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	FQB27P06 FQI27P06 FQI27P06TU FQB27P06TM
OCR Text	...m junction temperature 2. L = 0.9mh, IAS = -27A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description	60V P-Channel QFET 60V P-Channel MOSFET Inductor; Inductor Type:Standard; Inductance:350uH; Series:CMS; DC Resistance Max:0.04ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2A; Leaded Process Compatible:Yes; Leakage Inductance:3uH RoHS Compliant: Yes Inductor; Inductor Type:Standard; Inductance:146uH; Series:CMS; DC Resistance Max:0.017ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:3.4A; Leaded Process Compatible:Yes; Leakage Inductance:1.3uH RoHS Compliant: Yes
File Size	698.98K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
Part No.	FQP27P06
OCR Text	...m junction temperature 2. L = 0.9mh, IAS = -27A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te...
Description	60V P-Channel MOSFET Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes
File Size	694.18K / 8 Page	View it Online	Download Datasheet

For .9mh Found Datasheets File :: 336 Search Time::1.797ms
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