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-19a Datasheet PDF File

For -19a Found Datasheets File :: 871 Search Time::1.172ms
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				Fuji Electric
Part No.	2SK3685-01
OCR Text	...v gs =0v f=1mhz v cc =250v i d =19a v gs =10v l=1.25mh t ch =25c i f =19a v gs =0v t ch =25c i f =19a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 500 3.0 5.0 25 250 10 100 0.29 0.38 7.5 15 1560 2340 230 ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	105.78K / 4 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	ADP3157 ADP3157JR ADP3157JR-REEL
OCR Text	...03 10BQ015 VO 1.3V TO 3.5V 0-19a RTN CCOMP 3600pF 220 220 1nF Figure 2. Typical VRM8.2/8.3/8.4 Compliant Core DC/DC Converter Circuit VCC DRIVE1 DRIVE2 PGND 12 14 13 AGND 5 PWRGD 11 SENSE+ SENSE- DELAY VREF ...
Description	VRM 8.2/3/4 Buck Controller 5-Bit Programmable Synchronous Controller for Pentium III Processors
File Size	171.37K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STD38NH02L-1
OCR Text	...3. starting t j = 25 c, i d = 19a, v dd = 18v single pulse avalanche energy 250 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature table 2. thermal data rthj-case thermal resistance junction-case max 3.75...
Description	N-CHANNEL MOSFET
File Size	495.64K / 16 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BSS192P
OCR Text	... Reverse diode dv/dt IS =-0.19A, VDS =-200V, di/dt=-200A/s, Tjmax =150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-25 Preliminary dat...
Description	Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-89, RDSon = 12 SIPMOS Small-Signal-Transistor OptiMOS -P Small-Signal-Transistor
File Size	78.21K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV19N60E
OCR Text	...gate charge q g v cc =300v i d =19a v gs =10v - 105 160 nc gate-source charge q gs - 23 35 gate-drain charge q gd - 30 45 avalanche capability i av l=1.71mh, t ch =25c 19 - - a diode forward on-voltage v sd i f =19a, v gs =0v, t c h =25c - ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	413.90K / 5 Page	View it Online	Download Datasheet

				Motorola, Inc. Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	BCW72LT1 ON0181
OCR Text	... 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 ...
Description	From old datasheet system General Purpose Transistor(NPN Silicon)
File Size	415.84K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRE9160R FRE9160D FN3268 FRE9160H RE9160H
OCR Text	...-10V, ID = 30A VGS = -10V, ID = 19A VDD = -50V, ID = 30A Pulse Width = 3s Period = 300s, Rg = 10 0 VGS 10 (See Test Circuit) MIN -100 -2.0 4 85 180 -3 21 35 -0.6 MAX -4.0 100 100 1 0.025 0.25 90 -2.99 0.095 90 440 ns 250 170 18 350 750 -1...
Description	30 A, 100 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA From old datasheet system 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs 30A/ -100V/ 0.095 Ohm/ Rad Hard/ P-Channel Power MOSFETs
File Size	48.40K / 6 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV19N60ES
OCR Text	...gate charge q g v cc =300v i d =19a v gs =10v - 74 111 nc gate-source charge q gs - 23 34.5 gate-drain charge q gd - 25 38 gate-drain crossover charge q sw - 9 14 avalanche capability i av l=1.71mh, t ch =25c 19 - - a diode forward on-volta...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	455.34K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF19N40 FDP19N40
OCR Text	... n-channel mosfet 400v, 19a, 0.24 features ?r ds(on) =0.2 ( typ.)@ v gs = 10v, i d = 9.5a ? low gate charge ( typ. 32nc) ? low c rss ( typ. 20pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs co...
Description	N-Channel MOSFET 400V, 19A, 0.24Ω
File Size	253.97K / 9 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	2SK3640
OCR Text	... nc gate-drain charge q gd i d =19a 4.3 nc diode forward voltage v f(s-d) i f =19a,v gs =0v 0.95 v reverse recovery time t rr i f =19a,v gs =0v 21 ns reverse recovery charge q rr di/dt = 100 a/ s 12 nc draintosourceon-stateresistance 2sk364...
Description	Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode
File Size	196.44K / 2 Page	View it Online	Download Datasheet

For -19a Found Datasheets File :: 871 Search Time::1.172ms
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