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  vges Datasheet PDF File

For vges Found Datasheets File :: 2571    Search Time::1.015ms    
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    CM10AD00-12H

Mitsubishi Electric Semiconductor
Part No. CM10AD00-12H
OCR Text ... Collector-emitter voltage VCES vges Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation Rating 600 20 10 20 10 20 40 Unit V V A A A A W (Note. 2) (Note. 2) ...
Description MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE

File Size 60.28K  /  4 Page

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    CM15AD00-12H

Mitsubishi Electric Semiconductor
Part No. CM15AD00-12H
OCR Text ... Collector-emitter voltage VCES vges Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation Rating 600 20 15 30 15 30 50 Unit V V A A A A W (Note. 2) (Note. 2) ...
Description MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE

File Size 60.29K  /  4 Page

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    CM30AD00-12H

Mitsubishi Electric Semiconductor
Part No. CM30AD00-12H
OCR Text ... Collector-emitter voltage VCES vges Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation Rating 600 20 30 60 30 60 73 Unit V V A A A A W (Note. 2) (Note. 2) ...
Description MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE

File Size 58.55K  /  4 Page

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    CM50RL-24NF

Mitsubishi Electric Semiconductor
Part No. CM50RL-24NF
OCR Text ...25C) INVERTER PART Symbol VCES vges IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation G-E Short C-E Short DC, TC = 94C*1 Pul...
Description HIGH POWER SWITCHING USE

File Size 52.82K  /  6 Page

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    CM30MD-12H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM30MD-12H
OCR Text ...INGS INVERTER PART Symbol VCES vges IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G - E Short C - E ...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 138.64K  /  5 Page

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    HFS29_PM200D120SA HFS29_PM150D120SA HFS29_PM300D120SA HFS29 HFS29/PM200D120SA HFS29/PM150D120SA HFS29/PM300D120SA

Hongfa Technology
Part No. HFS29_PM200D120SA HFS29_PM150D120SA HFS29_PM300D120SA HFS29 HFS29/PM200D120SA HFS29/PM150D120SA HFS29/PM300D120SA
OCR Text ...ignn jocmrdn nk^dad_Sth]jg VCES vges I^ ICP TPSC Vdnj Te Tnob IF IFM Ioh Cjgg^ojm0hdoom qjgo\b G\o0hdoom qjgo\b Cjgg^ojm ^pmmio P\f ^jgg^ojm ^pmmio Scjmo ^dm^pdo kmjo^odji odh Injg\odji qjgo\b Jpi^odji ohkm\opm Sojm\b ohkm\opm Ddj_ ajmr\m_ ...
Description IGBT MODULE

File Size 92.26K  /  8 Page

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    CM50MX-24A

Mitsubishi Electric Semiconductor
Part No. CM50MX-24A
OCR Text ...INGS INVERTER PART Symbol VCES vges IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 97C Collector current ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 212.45K  /  8 Page

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    CM35MX-24A

Mitsubishi Electric Semiconductor
Part No. CM35MX-24A
OCR Text ...INGS INVERTER PART Symbol VCES vges IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 105C Collector current...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 213.37K  /  8 Page

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    CM100RX-24A CM100RX-24A09

Mitsubishi Electric Semiconductor
Part No. CM100RX-24A CM100RX-24A09
OCR Text ...INGS INVERTER PART Symbol VCES vges IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 90C Collector current ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 221.40K  /  8 Page

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    CM75RX-24A

Mitsubishi Electric Semiconductor
Part No. CM75RX-24A
OCR Text ...INGS INVERTER PART Symbol VCES vges IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 93C Collector current ...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 222.03K  /  8 Page

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For vges Found Datasheets File :: 2571    Search Time::1.015ms    
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