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  vdgs Datasheet PDF File

For vdgs Found Datasheets File :: 57    Search Time::1.657ms    
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    BS809

General Semiconductor
GE Security, Inc.
Part No. BS809
OCR Text ... Unit V V V mA mW C C VDSS vdgs VGS ID Ptot Tj TS Device on fiberglass substrate, see layout Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Drop (typ.)at VGS = 0, IF = 0.3 A, Tj = 25 C IF VF...
Description DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管(N沟道)(不适用通道的DMOS晶体管)

File Size 48.92K  /  2 Page

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    PHILIPS[Philips Semiconductors]
Part No. BUK7905-40ATE BUK7105-40ATE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Ts...
Description TrenchPLUS standard level FET

File Size 135.22K  /  16 Page

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    BS108

General Semiconductor
Part No. BS108
OCR Text ... Unit V V V mA W C C VDSS vdgs VGS ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Dro...
Description DMOS Transistors (N-Channel)

File Size 226.42K  /  5 Page

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    BS109

GE Security, Inc.
GE[General Semiconductor]
Part No. BS109
OCR Text ... Unit V V V mA mW C C VDSS vdgs VGS ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Dr...
Description DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管(N沟道)(不适用通道的DMOS晶体管)

File Size 36.93K  /  2 Page

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    Philips
Part No. BUK7C06_40AITE-01 BUK7C06-40AITE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) pe...
Description TrenchPLUS standard level FET
From old datasheet system

File Size 134.12K  /  15 Page

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    Philips
Part No. BUK9107_40ATC-03 BUK9107-40ATC
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot IDG(CL) IGS(...
Description TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | SOT-426
From old datasheet system
TrenchPLUS logic level FET

File Size 155.63K  /  16 Page

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    BS170

Diodes Inc.
Diodes Incorporated
Part No. BS170
OCR Text ...fied Characteristic Symbol VDSS vdgs VGS ID Pd Tj Tj, TSTG Value 60 60 20 300 830 150 -55 to +150 Unit V V V mA mW C C Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Junction Temperature Oper...
Description Regulated Output Power; 1.6kVDC Isolation; ULCertified; Low Profile, 10.2 mm Height; Over Current Protection; Five-Sided Shield; Standard DIP24
N-CHANNEL ENHANCEMENT MODE TRANSISTOR

File Size 64.75K  /  2 Page

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    BS170

General Semiconductor
Part No. BS170
OCR Text ... Unit V V V mA W C C VDSS vdgs VGS ID Ptot Tj Ts Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Dr...
Description DMOS Transistors (N-Channel)

File Size 231.93K  /  5 Page

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    BS107

Diodes Incorporated
Part No. BS107
OCR Text ...otherwise specified Symbol VDSS vdgs VGS ID Pd Tj, TSTG D BOTTOM VIEW C C D E G H SG D H G H All Dimensions in mm Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage Characteristic Value 200 200 20 120 8...
Description N-CHANNEL ENHANCEMENT MODE TRANSISTOR

File Size 60.27K  /  2 Page

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For vdgs Found Datasheets File :: 57    Search Time::1.657ms    
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