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  to220f Datasheet PDF File

For to220f Found Datasheets File :: 198    Search Time::1.25ms    
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    NXP Semiconductors N.V.
Part No. PSMN016-100XS
OCR Text to220f (sot186a) package qualified to 175c. this product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 features and benefits ? high efficiency due to low switching and conduct...
Description N-channel 100V 16 m standard level MOSFET in to220f (SOT186A)

File Size 199.83K  /  14 Page

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    Estek Electronics
Part No. 4N60
OCR Text ...ngs parameter symbol to220 to220f to252 units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 4.0 4.0 2.8 a drain currenet continuous t c =100 i d 2.4 2.4 1.8 a drain current puls...
Description 600Volts N-Channel MOSFET

File Size 401.73K  /  5 Page

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    7N60

Estek Electronics Co. Ltd
Part No. 7N60
OCR Text ...ings parameter symbol to220 to220f units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 7.0 7.0 a drain currenet continuous t c =100 i d 4.3 4.3 a drain current pulsed ...
Description 7 Amps?00Volts N-Channel MOSFET

File Size 347.36K  /  5 Page

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    2N60

Estek Electronics Co. Ltd
Part No. 2N60
OCR Text ...gs parameter symbol to220 to220f to251 to252 units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 2.0 2.0 1.9 a drain currenet continuous t c =100 i d 1.35 1.35 1.14 a drain ...
Description N2 Amps?00Volts N-Channel MOSFET

File Size 368.34K  /  5 Page

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    4N60

Estek Electronics Co. Ltd
Part No. 4N60
OCR Text ...rrent VSD VGS=0V ISD=4.0A(TO220,to220f) ISD=2.8A(TO252) TO-220,TO-220F TO-252 Pulsed Drain-Source Current Reverse Recovery Time ISM tRR TO-220,TO-220F TO-252 ISD=4.0A, dISD/dt=100A/s --1.4 V tD(ON) tR tD(OFF) tF QG QGS QGD VDD=300V, ID=4.0A...
Description 4 Amps锛?00Volts N-Channel MOSFET

File Size 373.81K  /  5 Page

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    SSBD2060CT SSBD2060CTF

Silikron Semiconductor Co.,LTD.
Silikron Semiconductor ...
Part No. SSBD2060CT SSBD2060CTF
OCR Text ...leg) to220 2 /w r jc to220f 4 /w electrical characterizes @t a =25 unless otherw ise specified symbol characterizes min typ max unit test condition v r reverse breakdown voltage 60 v i r =0...
Description Main Product Characteristics

File Size 470.34K  /  6 Page

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    SSBR10100CT SSBR10100CTF

Silikron Semiconductor ...
Silikron Semiconductor Co.,LTD.
Part No. SSBR10100CT SSBR10100CTF
OCR Text ...apability TO220 SSBR10100CT to220f SSBR10100CTF Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward ...
Description High Junction Temperature

File Size 186.76K  /  2 Page

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    SSBR20100CTF SSBR20100CT

Silikron Semiconductor Co.,LTD.
Part No. SSBR20100CTF SSBR20100CT
OCR Text ...apability TO220 SSBR20100CT to220f SSBR20100CTF Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward ...
Description High Junction Temperature

File Size 188.18K  /  3 Page

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    FFPF60SB60DS FFPF60SB60DSTU

Fairchild Semiconductor
Part No. FFPF60SB60DS FFPF60SB60DSTU
OCR Text ...r switching circuits 1 23 to220f 1. Cathode 2. Anode(Cathode) 3. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reve...
Description STEALTH-TM II Rectifier
4A, 600V STEALTHTM II Rectifier

File Size 260.75K  /  5 Page

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    FMXB-2102

Sanken electric
Part No. FMXB-2102
OCR Text ...y side rectification FRD into a to220f package. By using the temperature change of the leakage current of the built-in SBD, high-precision heating protection can be performed without using expensive temperature sensors, such as a thermistor...
Description Fast Recovery Diode with built-in SBD for temperature detection

File Size 313.67K  /  8 Page

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For to220f Found Datasheets File :: 198    Search Time::1.25ms    
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