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ST Microelectronics
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Part No. |
STRH100N10FSY302 STRH100N10FSY301
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OCR Text |
...f states @ t j = 25 c, (co60 rays 70 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +4 a i gss gate body leakage current (v ds = 0) v gs = 20 v 150 na bv ... |
Description |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
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File Size |
398.85K /
17 Page |
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