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  qgd Datasheet PDF File

For qgd Found Datasheets File :: 21606    Search Time::3.39ms    
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    IRF[International Rectifier]
Part No. IRLR7833 IRLU7833 IRLR7833TR IRLR7833TRL IRLR7833TRR
OCR Text ...)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage ...
Description 30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 184.92K  /  11 Page

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    IRF661B9 IRF6619

International Rectifier
Part No. IRF661B9 IRF6619
OCR Text ...a Low Package Inductance Qg tot qgd Qgs2 Qrr Qoss Vgs(th) Optimized for High Frequency Switching above 1MHz Ideal for CPU Core DC-DC Converters 38nC 13nC 3.5nC 18nC 22nC 2.0V Optimized for Sync. FET socket of Sync. Buck Converter Low Condu...
Description DIRECTFET POWER MOSFET

File Size 287.27K  /  9 Page

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    IRF370B9ZPBF IRF3709ZLPBF IRF3709ZPBF IRF3709ZSPBF

International Rectifier
Part No. IRF370B9ZPBF IRF3709ZLPBF IRF3709ZPBF IRF3709ZSPBF
OCR Text ...)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage ...
Description HEXFET Power MOSFET

File Size 371.66K  /  12 Page

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    IRF370B9ZCLPBF IRF3709ZCLPBF IRF3709ZCSPBF

International Rectifier
Part No. IRF370B9ZCLPBF IRF3709ZCLPBF IRF3709ZCSPBF
OCR Text ...)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage ...
Description HEXFET Power MOSFET

File Size 355.34K  /  11 Page

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    AP4501GD AP4501GD-14

Advanced Power Electronics ...
Advanced Power Electronics Corp.
Part No. AP4501GD AP4501GD-14
OCR Text ...N) VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 13 9 2 5 6 5 19 5 645 150 95 1.6 Max. Units 28 42 3 1 25 100 15 1030 2....
Description Low Gate Charge
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 80.79K  /  7 Page

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    AP4501GSD

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP4501GSD
OCR Text ... VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=7A...
Description 30V N-Channel PowerTrench MOSFET 7 A, 30 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 94.95K  /  7 Page

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    AP4575GM

Advanced Power Electronics Corp.
Part No. AP4575GM
OCR Text ...N) VGS(th) gfs IDSS IGSS Qg Qgs qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Dra...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 127.32K  /  7 Page

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    ROHM[Rohm]
Part No. QS6M3
OCR Text ...on) tr td (off) tf Qg Qgs qgd Min. - 30 - 0.5 - - - 1.0 - - - - - - - - - - Typ. - - - - 170 180 260 - 80 25 15 7 18 15 15 1.6 0.5 0.9 Max. 10 - 1 1.5 230 245 360 - - - - - - - - - - - Unit A V A V m S pF pF pF ns ns ns n...
Description Small switching

File Size 83.98K  /  8 Page

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    PML260SN

NXP Semiconductors
Philips Semiconductors
Part No. PML260SN
OCR Text ... V I RDSon 294 m I ID 8.8 A I qgd = 4.2 nC (typ) 2. Pinning information Table 1. Pin 1, 2, 3 4 5, 6, 7, 8 Pinning Description source (S) gate (G) drain (D) G Simplified outline 8765 Symbol D 1234 Transparent top view ...
Description N-channel TrenchMOS standard level FET

File Size 78.30K  /  12 Page

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    IR
Part No. IRF6655
OCR Text ...ecified) VDSS Qg tot VGS qgd 2.8nC 100V max 20V max 8.7nC Vgs(th) 3.9V SH MN DirectFET ISOMETRIC Description The IRF6655 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM p...
Description DirectFET Power MOSFET Typical values (unless otherwise specified)

File Size 251.62K  /  10 Page

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