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  pulsed-load Datasheet PDF File

For pulsed-load Found Datasheets File :: 20217    Search Time::2ms    
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    ST Microelectronics
Part No. STD40NF03L
OCR Text ...0c 20 a i dm ( ) drain current (pulsed) 80 a p tot total dissipation at t c = 25c 55 w derating factor 0.37 w/c t stg storage temperature -...load, figure 3) 20 170 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v ...
Description N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET

File Size 262.33K  /  7 Page

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    ST Microelectronics
Part No. STD40NF03LT4
OCR Text ...0c 28 a i dm ( ) drain current (pulsed) 160 a p tot total dissipation at t c = 25c 80 w derating factor 0.53 w/c dv/dt (1) peak diode reco...load, figure 3) 22 165 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v ...
Description N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET

File Size 510.77K  /  9 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...oltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C...load, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    STD40NE03L STD40NE03LT4

STMICROELECTRONICS
ST Microelectronics
Part No. STD40NE03L STD40NE03LT4
OCR Text ...20** a i dm ( ) drain current (pulsed) 160 a p tot total dissipation at t c = 25 o c55w derating factor 0.37 w/ o c dv/dt ( 1 ) peak diod...load, see fig. 3) 38 260 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge ...
Description 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-CHANNEL 30V - 0.012 OHM - 40A TO-252 STRIPFET POWER MOSFET

File Size 270.82K  /  8 Page

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    STB15NM65N

STMicroelectronics
Part No. STB15NM65N
OCR Text ...e operating area drain current (pulsed) 62 62 (1) a p tot total dissipation at t c = 25c 150 35 w dv/dt (3) 3. i sd 15.5a, di/dt 4...load drain source voltage slope vdd=520 v, id=15.5 a, vgs=10 v 30 v/ns i dss zero gate voltage dra...
Description N-channel Power MOSFET

File Size 520.19K  /  18 Page

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    STP6NB25 STP6NB25FP

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP6NB25 STP6NB25FP
OCR Text ...os) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand...Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For R...
Description N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

File Size 107.66K  /  9 Page

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    ST Microelectronics, Inc.
Part No. STFV3N150
OCR Text ...us) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Insulation withstand voltage (RMS) from all three leads to external he...load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switchin...
Description N-channel 1500V - 8 Ohm - 2.5A - TO-220 - TO-220FH - TO-247 Very high voltage PowerMESH Power MOSFET

File Size 389.79K  /  15 Page

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    STB15NM60N

STMicroelectronics
Part No. STB15NM60N
OCR Text ...e operating area drain current (pulsed) 56 56 (1) a p tot total dissipation at t c = 25c 125 30 w dv/dt (3) 3. i sd 14a, di/dt ...load drain-source voltage slope v dd = 480v,i d = 14a, v gs = 10v 30 v/ns i dss zero gate voltage...
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    ST Microelectronics
Part No. STE40NK90ZD
OCR Text ...us) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recove...Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit...
Description N-CHANNEL Power MOSFET

File Size 245.33K  /  10 Page

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    FAN7171MX

Fairchild Semiconductor
Part No. FAN7171MX
OCR Text ...i o+ output high, short-circuit pulsed current (5) v ho =0v, v in =5v, pw ? 10s 3.0 4.0 a i o- output low, short-circuit pulsed current (5) v ho =15v,v in =0v, pw ? 10s 3.0 4.0 a v s allowable negative v s pin voltage for in signal ...
Description High-Current High-Side Gate Drive IC

File Size 406.62K  /  11 Page

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