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For pulsed Found Datasheets File :: 56454    Search Time::1.703ms    
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    FDU7N20 FDD7N20TF FDD7N20TM FDD7N20

Fairchild Semiconductor
Part No. FDU7N20 FDD7N20TF FDD7N20TM FDD7N20
OCR Text ...in Current Drain Current Single pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - pulsed -Continuous (TC = 100oC) (Not...
Description N-Channel MOSFET

File Size 298.11K  /  9 Page

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    FQB33N1004 FQI33N10

Fairchild Semiconductor
Part No. FQB33N1004 FQI33N10
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQB33N10 / FQI33N10 100 33 23 132 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single pulsed Avalanche Energy Avalanche Curren...
Description 100V N-Channel MOSFET

File Size 589.67K  /  10 Page

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    Bruckewell Technology LTD
Part No. MSF12N65
OCR Text ...7.4 a i dm drain current pulsed 48 a e as s ingle pulsed avalanche energy 865 mj e ar repetitive avalanche energy 23.1 mj dv/dt peak diode recovery dv/dt 4 .5 v/ns p d power dissipation ( tc = 25 c...
Description 650V N-Channel MOSFET

File Size 977.63K  /  7 Page

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    Bruckewell Technology LTD
Part No. MSF10N65
OCR Text ...6.0 a i dm drain current pulsed 40 a e as s ingle pulsed avalanche energy 7 10 mj i a r avalanche current 10 a e ar repetitive avalanche energy 16.2 mj dv/dt peak diode recovery dv/dt 4.5 v/ns ...
Description 650V N-Channel MOSFET

File Size 1,058.89K  /  7 Page

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    Bruckewell Technology LTD
Part No. MSF10N60
OCR Text ...5.7 a i dm drain current pulsed 38 a e as s ingle pulsed avalanche energy 700 mj i a r avalanche current 9. 5 a e ar repetitive avalanche energy 15.6 mj dv/dt pea k diode recovery dv/dt 4.5 v/ns ...
Description 600V N-Channel MOSFET

File Size 1,075.90K  /  7 Page

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    Bruckewell Technology LTD
Part No. MSF10N40
OCR Text ...6.6 a i dm drain current pulsed 402 a e as s ingle pulsed avalanche energy 378 mj i a r avalanche current 9.2 a e ar repetitive avalanche energy 13.9 mj msf10n40 4 00v n - channel mosfet publicat...
Description 400V N-Channel MOSFET

File Size 1,076.50K  /  7 Page

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    New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. STW12NK80Z STB12NK80Z STP12NK80Z
OCR Text ...ous) attc = 100c drain current (pulsed) total dissipation at tc = 25c derating factor gate source esd(hbm-c=100pf, r=1.5kfi) peak diode recovery voltage slope operating junction temperature storage temperature value 800 800 30 10.5 6.6 42 1...
Description N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?Power MOSFET

File Size 147.79K  /  3 Page

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    IRF7306PBF

International Rectifier
Part No. IRF7306PBF
OCR Text ... 25C VGS dv/dt TJ, TSTG 10 Sec. pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Reco...
Description HEXFET?Power MOSFET
HEXFET㈢Power MOSFET

File Size 229.12K  /  9 Page

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    IRF7404QPBF

International Rectifier
Part No. IRF7404QPBF
OCR Text ... 25C VGS dv/dt TJ, TSTG 10 Sec. pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode R...
Description HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )
HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ )

File Size 259.23K  /  9 Page

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    SPLBX98-2S

OSRAM GmbH
Part No. SPLBX98-2S
OCR Text ...eranzen auf Anfrage erhaltlich. pulsed peak wavelength at 1 s pulse width and 4 kHz repetition rate refer to measurement on an unmonted laser bar. Other peak wavelengths or tolerances are available on request. 2) Kennwerte (TA = 25 C)...
Description Unmounted Laser Bars, 30% Fill-Factor, 980 nm

File Size 122.52K  /  4 Page

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