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Bruckewell Technology LTD
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Part No. |
MSF12N65
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OCR Text |
...7.4 a i dm drain current pulsed 48 a e as s ingle pulsed avalanche energy 865 mj e ar repetitive avalanche energy 23.1 mj dv/dt peak diode recovery dv/dt 4 .5 v/ns p d power dissipation ( tc = 25 c... |
Description |
650V N-Channel MOSFET
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File Size |
977.63K /
7 Page |
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it Online |
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Bruckewell Technology LTD
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Part No. |
MSF10N65
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OCR Text |
...6.0 a i dm drain current pulsed 40 a e as s ingle pulsed avalanche energy 7 10 mj i a r avalanche current 10 a e ar repetitive avalanche energy 16.2 mj dv/dt peak diode recovery dv/dt 4.5 v/ns
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Description |
650V N-Channel MOSFET
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File Size |
1,058.89K /
7 Page |
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it Online |
Download Datasheet |
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Bruckewell Technology LTD
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Part No. |
MSF10N60
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OCR Text |
...5.7 a i dm drain current pulsed 38 a e as s ingle pulsed avalanche energy 700 mj i a r avalanche current 9. 5 a e ar repetitive avalanche energy 15.6 mj dv/dt pea k diode recovery dv/dt 4.5 v/ns
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Description |
600V N-Channel MOSFET
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File Size |
1,075.90K /
7 Page |
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it Online |
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Bruckewell Technology LTD
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Part No. |
MSF10N40
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OCR Text |
...6.6 a i dm drain current pulsed 402 a e as s ingle pulsed avalanche energy 378 mj i a r avalanche current 9.2 a e ar repetitive avalanche energy 13.9 mj
msf10n40 4 00v n - channel mosfet publicat... |
Description |
400V N-Channel MOSFET
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File Size |
1,076.50K /
7 Page |
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it Online |
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New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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Part No. |
STW12NK80Z STB12NK80Z STP12NK80Z
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OCR Text |
...ous) attc = 100c drain current (pulsed) total dissipation at tc = 25c derating factor gate source esd(hbm-c=100pf, r=1.5kfi) peak diode recovery voltage slope operating junction temperature storage temperature value 800 800 30 10.5 6.6 42 1... |
Description |
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?Power MOSFET
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File Size |
147.79K /
3 Page |
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it Online |
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Price and Availability
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