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  oc-48 oc-192 Datasheet PDF File

For oc-48 oc-192 Found Datasheets File :: 581    Search Time::1.656ms    
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    STB80NF75L STB80NF75L-1 STP80NF75L

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STB80NF75L STB80NF75L-1 STP80NF75L
OCR Text ...Tj TJMAX (2) Starting T j = 25 oC, ID = 40A, VDD= 40V November 2001 . 1/11 STB80NF75L/-1/ STP80NF75L THERMAL DATA Rthj-case Rth...48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.04...
Description N-CHANNEL 75V - 0.008 OHM - 80A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET

File Size 367.37K  /  11 Page

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    STB30NE06L 6525

STMICROELECTRONICS[STMicroelectronics]
Part No. STB30NE06L 6525
OCR Text ...NCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION...48 V ID = 30 A V GS = 5 V Min. Typ. 25 105 20 8 10 28 Max. Unit ns ns nC nC nC SWITCHING OFF Sym...
Description From old datasheet system
N - CHANNEL 60V - 0.35ohm - 30A - D2PAK STripFET] POWER MOSFET

File Size 46.61K  /  6 Page

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    STB3NA80 4229 STB3NA80T4

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NA80 4229 STB3NA80T4
OCR Text ...50 150 Unit V V V A A A W W/ oC o o C C (*) Pulse width limited by safe operating area October 1995 1/10 STB3NA80 THERMA...48 2 2 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF ...
Description Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system

File Size 126.03K  /  10 Page

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    STB3NB60 5982

STMicroelectronics
Part No. STB3NB60 5982
OCR Text ...d) Total Dissipation at Tc = 25 oC Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperat...48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.4 MIN. 0.169 0.098 0.0...
Description From old datasheet system
N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET

File Size 90.97K  /  9 Page

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    STB3NC60 STB3NC60T4 STB3NC60-1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. STB3NC60 STB3NC60T4 STB3NC60-1
OCR Text ...CAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V ( BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage ...48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 1 0.2 8 13.5 3.78 1.4 MIN. 0.169 0.098 0...
Description TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

File Size 93.20K  /  9 Page

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    STB50NE10

STMICROELECTRONICS[STMicroelectronics]
Part No. STB50NE10
OCR Text ...E TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION...48 88 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter S...
Description N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET

File Size 85.17K  /  8 Page

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    STB55NE06L 5722

STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. STB55NE06L 5722
OCR Text ...NCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION...48 V I D = 27.5 A V GS = 5 V I D = 55 A VGS = 5 V Min. Typ. 40 100 40 13 20 Max. 55 140 55 Unit ns n...
Description N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)

File Size 54.22K  /  5 Page

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    STB55NE06 5405

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB55NE06 5405
OCR Text ...NCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE...48 V ID = 55 A V GS = 10 V Min. Typ . 30 120 80 13 25 Max. 40 160 105 Un it ns ns nC nC nC SWITCH...
Description N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET

File Size 97.67K  /  8 Page

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    STB5NA50

STMICROELECTRONICS[STMicroelectronics]
Part No. STB5NA50
OCR Text ...50 150 Unit V V V A A A W W/ oC o o C C (*) Pulse width limited by safe operating area October 1995 1/10 STB5NA50 THERMA...48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0....
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 125.06K  /  10 Page

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    STB5NA80 4891

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB5NA80 4891
OCR Text ...CAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage T...48 1.27 TYP. MAX. 4.6 2.69 0.93 1.38 1.4 0.6 1.36 9.35 2.64 10.28 13.5 3.78 1.37 MIN. 0.169 0.098 0....
Description N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 130.49K  /  10 Page

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