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  multiepitaxial Datasheet PDF File

For multiepitaxial Found Datasheets File :: 198    Search Time::1ms    
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    D44H8 D44H11 4213

STMICROELECTRONICS[STMicroelectronics]
Part No. D44H8 D44H11 4213
OCR Text ...e D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. 1 2...
Description From old datasheet system
NPN SILICON POWER TRANSISTORS

File Size 61.34K  /  5 Page

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    TIP47 TIP50 TIP49 TIP48

STMICROELECTRONICS[STMicroelectronics]
Part No. TIP47 TIP50 TIP49 TIP48
OCR Text ...48, TIP49 and TIP50 are silicon multiepitaxial NPN Planar transistors mounted in Jedec TO-220 plastic package. It is intented for use in linear and switching applications. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMU...
Description SILICON NPN SWITCHING TRANSISTORS

File Size 48.36K  /  4 Page

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    BUH515D

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH515D
OCR Text ...e BUH515D is manufactured using multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in tele...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 71.41K  /  7 Page

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    BUH515

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH515
OCR Text ...he BUH515 is manufactured using multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in tele...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

File Size 84.64K  /  7 Page

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    BUV46A BUV46 5394

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STMICROELECTRONICS[STMicroelectronics]
Part No. BUV46A BUV46 5394
OCR Text ...RIPTION The devices are silicon multiepitaxial Mesa NPN transistors in the Jedec TO-220 plastic package intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEX V ...
Description HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
From old datasheet system

File Size 46.99K  /  4 Page

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    BUX98A BUX98 BUX98A-QR-B

SEME-LAB[Seme LAB]
SEMELAB LTD
Part No. BUX98A BUX98 BUX98A-QR-B
OCR Text ...he BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistors in JEDEC TO-3 metal-case intended and industrial applications from single and three-phase mains operation. 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 ...
Description    HIGH VOLTAGE FAST SWITCHING
30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-3

File Size 17.57K  /  2 Page

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    BUX98 4224 BUX98A

STMICROELECTRONICS[STMicroelectronics]
Part No. BUX98 4224 BUX98A
OCR Text ...he BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol...
Description From old datasheet system
HIGH POWER NPN SILICON TRANSISTORS

File Size 62.79K  /  4 Page

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    BUR51 4420

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUR51 4420
OCR Text ...CRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ...
Description HIGH CURRENT NPN SILICON TRANSISTOR
From old datasheet system

File Size 64.30K  /  4 Page

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    STMicro
Part No. BU508DFI 4494
OCR Text ...BU508DFI are manufactured using multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 2 1 3 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM For TO...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
From old datasheet system

File Size 73.56K  /  7 Page

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    STMicro
Part No. S2000AFI 4342
OCR Text ... S2000AFI is manufactured using multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 2 1 3 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RA...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 69.82K  /  6 Page

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