mho pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LCX009AK 6SXXX M025E TLE7232G BD07AV 2SK19 MUN2213 T6A11A
	Product Description
	Full Text Search

mho Datasheet PDF File

For mho Found Datasheets File :: 1704 Search Time::2.641ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				STMicroelectronics
Part No.	TSD2931-10 SD2931-10
OCR Text	... Max. 5 5 Un it V mA A V V mho 2.0 5 480 190 18 5.0 3.0 V DS( ON) pF pF pF REF. 7165489C * VGS(Q) sorted with alpha/numeric code marked on unit. DYNAMIC Symb ol P OUT G PS D f = 175 MHz f = 175 MHz f = 175 MHz Param...
Description	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
File Size	91.42K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TSD2931 SD2931
OCR Text	...5 5 3 Typ. Max. Unit V mA A V V mho pF pF pF DYNAMIC Symbol P OUT G PS D f = 175 MHz f = 175 MHz f = 175 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V I DQ = 250 mA P out = 150 W P out = 150 W P out = 150 W I DQ = 250 mA I DQ = 250 ...
Description	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
File Size	46.90K / 4 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TSD2932 SD2932
OCR Text	...5 3 Typ . Max. Un it V mA A V V mho pF pF pF REF.7163911A DYNAMIC Symb ol P OUT G PS D f = 175 MHz f = 175 MHz f = 175 MHz Parameter V DD = 50 V V DD = 50 V V DD = 50 V I DQ = 500 mA P out = 300 W P out = 300 W P out = 300 W IDQ = 500 ...
Description	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
File Size	121.75K / 13 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	LET9060C
OCR Text	....0 0.8 Typ. Max. Unit V A A V V mho pF pF pF DYNAMIC Symbol P1dB GP D Load mismatch VDD = 26 V VDD = 26 V VDD = 26 V Test Conditions IDQ = 250 mA IDQ = 250 mA IDQ = 250 mA POUT = 60 W POUT = 60 W POUT = 60 W f = 945 MHz f = 945 MHz f = ...
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology
File Size	35.68K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	LET9060S
OCR Text	....0 0.8 Typ. Max. Unit V A A V V mho pF pF pF Ref. 7143417B DYNAMIC (f = 945 MHz) Symbol GP D IMD3 P1dB GP D Load mismatch Test Conditions VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VDD = 26 V IDQ = 250 mA VD...
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
File Size	294.85K / 10 Page	View it Online	Download Datasheet

				LINER[Linear Technology]
Part No.	LT1166 LT1166CN8 LT1166CS8
OCR Text	...0.16 UNITS mV A M mV mV V mA mho mho mho mho dB dB V V 0.100 0.100 0.125 0.125 19 19 1.3 - 1.3 q q 1.0 - 1.0 1.5 - 1.5 The q denotes specifications which apply over the full operating temperature range. Note 1: External po...
Description	From old datasheet system Power Output Stage Automatic Bias System
File Size	454.05K / 16 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2941
OCR Text	... 130 87 - - Unit V V nA nA A A mho s pF pF pF ns ns ns ns nC nC nC Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time - - - - - - - - 150 200 2.5 250...
Description	MOSFET N-Ch, Enhancement Mode High Speed Switch
File Size	25.21K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE312
OCR Text	...z D High Transconductance: 4000 mho Min at 400MHz D Low Crss: 1pF Max D High (Yfs) / Ciss Ratio (High-Frequency Figure-of-Merit) D Drain and Gate Leads Separated for High Maximum Stable Gain D Cross-Modulation Minimized by Square-Law Transf...
Description	N-Channel Silicon Junction Field Effect Transistor
File Size	23.63K / 3 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	LET19060C
OCR Text	... 1 4.5 Typ. Max. Unit V A A V V mho pF pF pF Unit * Includes Internal Matching Test Conditions DYNAMIC (f = 2000 MHz) P1dB D(1) Load mismatch VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD POUT = 60 W 70 45 75 50 10:1 W % VSWR VDD =...
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技 RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
File Size	33.82K / 4 Page	View it Online	Download Datasheet

For mho Found Datasheets File :: 1704 Search Time::2.641ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |