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MIMIX[Mimix Broadband]
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| Part No. |
XP1028-BD-EV1 XP1028-BD-000V XP1028-BD
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| OCR Text |
...point. The device also includes lange couplers to achieve good input and output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatabilit... |
| Description |
43.5-46.5 GHz GaAs MMIC Power Amplifier
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| File Size |
342.30K /
5 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
KA33401 KA334D KA334
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| OCR Text |
...dwidth Product Input Resistance lange Signal Input Noise Voltage Input Noise Current Common Mode Rejection Ratio Supply Voltage Rejection Ratio Output Voltage Swing Channel Separation Total Harmonic Distortion Thermal stutdown Temperature (... |
| Description |
Dual Power Operational Amplifier
From old datasheet system
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| File Size |
75.92K /
8 Page |
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it Online |
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MIMIX[Mimix Broadband]
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| Part No. |
XP1024-BD-EV1 XP1024-BD XP1024-BD-000V
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| OCR Text |
...0 dBm. The device also includes lange couplers to achieve good output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon el... |
| Description |
26.0-31.0 GHz GaAs MMIC Power Amplifier
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| File Size |
211.59K /
7 Page |
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it Online |
Download Datasheet |
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Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
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| Part No. |
30SPA0536
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| OCR Text |
...power. The device also includes lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability an... |
| Description |
27.0-33.0 GHz GaAs MMIC Power Amplifier 27000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
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| File Size |
292.42K /
5 Page |
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it Online |
Download Datasheet |
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MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
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| Part No. |
44MPA0478
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| OCR Text |
...point. The device also includes lange couplers to achieve good input and output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatabilit... |
| Description |
43.5-46.5 GHz GaAs MMIC Power Amplifier
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| File Size |
432.82K /
5 Page |
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it Online |
Download Datasheet |
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SHARP[Sharp Electrionic Components]
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| Part No. |
LT1F67AF LT1F67
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| OCR Text |
...
I Labeling on one side of f lange. 1 (Part name.quantity,loc No.)
Packing
Specification
In order to avoid the absorption of humidity in transport .a& storage, the~devices are
psdtcd in alusim0 skve.
4
1. Storage Conditio... |
| Description |
DEVICE SPECIFICATION FOR Light Emitting Diode
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| File Size |
463.96K /
10 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
Q68000-A8000 IRL81 IRL81A
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| OCR Text |
...he Abstrahlung q Preisgunstig q lange Lebensdauer (Langzeitstabilitat) q Weiter Offnungskegel ( 25) q Passend zu Fototransistor LPT 80 A Anwendungen
q Fertigungs- und Kontrollanwendungen
Features q GaAIAs infrared emitting diode in the ... |
| Description |
From old datasheet system
GaAlAs-Infrarot-Sendediode GaAlAs Infrared Emitter
ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% 发动 Infrarot - Sendediode GaAlA红外发射
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| File Size |
151.84K /
3 Page |
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it Online |
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Price and Availability
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