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isd-1 Datasheet PDF File

For isd-1 Found Datasheets File :: 11197 Search Time::1.547ms
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				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	... = 27A , Starting TJ = 25C 3) @ ISD 27A , di/dt 70A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1...1 Min. 100 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Break...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...age limitation current is 75A. ISD 85A, di/dt 310A/s, VDD V(BR)DSS, Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive ...1 0.1 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS, Drain-to-Source Voltage (V) ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...5, IAS = 100A. (See Figure 12) ISD 100A, di/dt 150A/s, VDD V(BR)DSS, TJ 200C Pulse width 400s; duty cycle 2%. Coss eff. is a fix...1 20s PULSE WIDTH T = 25 C J 1 10 100 10 0.1 20s PULSE WIDTH T = 200 C J 1 10 100 ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	... Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse 1 10 VDS , Drain-toSource Voltage (V) 100 1.00 VGS = 0V 0.10 0.0 0.5 1.0 1.5 VSD , Source-toDrain Voltage (V...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...V GS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + V DD * Reverse Polarity of D.U.T f...1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	...S: VSD trr QRR TJ = 25oC, ISD = 8.1A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s 92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	... = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0...1 Min. 200 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Break...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...o Drain Current (Note 3) SYMBOL ISD ISM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN -...1.6 - 300 3.4 - 1.8 640 7.2 - V ns C - 2. Pulse test: pulse width 300s, duty cycle 2%....
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	... = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)...1 Min. 200 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Break...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...ource Current (A) TJ = 175C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 1000 100sec 100 10.0 TJ = 25C 1.0 10 1msec 10msec DC 10 100 1000 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

For isd-1 Found Datasheets File :: 11197 Search Time::1.547ms
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