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For intensive-contact Found Datasheets File :: 473    Search Time::1.984ms    
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    K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F2808U0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2808U0A is an opt...
Description 16M x 8 Bit NAND Flash Memory

File Size 351.20K  /  26 Page

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    K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-H K9F6408U0C-B K9F6408U0C-F K9F6408U0C-H K9F6408U0C-Q K9F6408U0C-T K9F6408U0C-V

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F6408Q0C K9F6408Q0C-B K9F6408Q0C-H K9F6408U0C-B K9F6408U0C-F K9F6408U0C-H K9F6408U0C-Q K9F6408U0C-T K9F6408U0C-V
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F6408X0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have be...
Description 8M x 8 Bit Bit NAND Flash Memory

File Size 495.88K  /  29 Page

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    K9F6408U0A-TCB0 K9F6408U0A-TIB0

SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
Part No. K9F6408U0A-TCB0 K9F6408U0A-TIB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F6408U0As extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms ha...
Description From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory

File Size 344.78K  /  26 Page

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    K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F6408U0Bs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have be...
Description 8M x 8 Bit NAND Flash Memory

File Size 412.99K  /  27 Page

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    K9F6408U0M-TCB0 K9F6408U0M-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F6408U0M-TCB0 K9F6408U0M-TIB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F6408U0Ms extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correcting Code) or real time mapping-out algorithm. These algorith...
Description 8M x 8 Bit NAND Flash Memory

File Size 477.87K  /  26 Page

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    DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F1208U0M's extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208U0M-YCB0/YIB...
Description 64M x 8 Bit NAND Flash Memory

File Size 1,135.14K  /  41 Page

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    K9F1208B0B K9F1208R0B K9F1208U0B

SAMSUNG[Samsung semiconductor]
Part No. K9F1208B0B K9F1208R0B K9F1208U0B
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F1208X0Bs extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. Command Sets Function Read 1 Read 2 Read ID Reset Page Program (T...
Description 64M x 8 Bit NAND Flash Memory

File Size 1,018.72K  /  45 Page

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    K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y K9F1208R0B
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F1208X0Bs extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. Command Sets Function Read 1 Read 2 Read ID Reset Page Program (T...
Description 64M x 8 Bit NAND Flash Memory

File Size 762.36K  /  45 Page

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    K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DI

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F12XXX0As extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. Command Sets Function Read 1 Read 2 Read ID Reset Page Program (T...
Description 64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V

File Size 805.26K  /  45 Page

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    K9F1208U0A K9F1216U0A

SAMSUNG[Samsung semiconductor]
Part No. K9F1208U0A K9F1216U0A
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the K9F12XXU0As extended reliability of 100K program/erase cycles by...contact with Samsung. Table 1. Command Sets Function Read 1 Read 2 Read ID Reset Page Program (T...
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

File Size 957.56K  /  45 Page

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