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  id-11a Datasheet PDF File

For id-11a Found Datasheets File :: 9443    Search Time::1.922ms    
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    UC3842AD1 UC3842AN UC3844AD1 UC3844AN UC3843A UC3843AD1 UC3845AD1 UC3845AN UC2845AD1 UC2845AN UC2844A UC2844AD1 UC2844AN

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. UC3842AD1 UC3842AN UC3844AD1 UC3844AN UC3843A UC3843AD1 UC3845AD1 UC3845AN UC2845AD1 UC2845AN UC2844A UC2844AD1 UC2844AN UC2842A UC2842AD1 UC2843A UC2843AD1 UC2843AN UC3842A UC3845A UC3844A UC2845A UC2842AN UC3842 UC3843AN
OCR Text ...V REG PWM RT CLOCK 4 OSCILLATOR ID CT 5 GND D95IN344 CT OUTPUT 6 OUTPUT LARGE RT/SMALL CT CT OUTPUT SMALL RT/LARGE CT 7/15 ...1 - Figure 15 : Under Voltage Lockout. Vi 7 ON/OFF COMMAND TO REST OF IC ICC UC...
Description (UC3842A - UC3845A) HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER
(UC2842A - UC2845A) HIGH PERFORMANCE CURRENT MODE PWM CONTROLLER

File Size 127.69K  /  15 Page

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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ...ge temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -60 20 -1 -4 -1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Mark...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --450 30 --4 --16 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Vo...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ...) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25C) I...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ...on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Absolute Maximum Ratings (Ta = 2...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ520 2SJ520TP-FA

Sanyo Semicon Device
Sanyo Electric Co., Ltd.
Part No. 2SJ520 2SJ520TP-FA
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -20 10 -10 -40 1 20 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakd...
Description P-Channel Silicon MOSFET Load Switching Applications
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 20V的五(巴西)直| 10A条(丁)|52VAR

File Size 43.24K  /  4 Page

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    2SJ522

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SJ522
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25C Conditions Ratings --400 30 --5 --20 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volt...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 30.28K  /  4 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cera...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -2 -8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cerami...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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