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id-11.2a Datasheet PDF File

For id-11.2a Found Datasheets File :: 4543 Search Time::1.953ms
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				SANYO[Sanyo Semicon Device]
Part No.	VEC2602
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a cerami...11 17 53 35 11 2.4 1.7 --0.87 --1.2 86 168 --30 --1 10 --2.4 V A A V S m m pF pF pF ns ns ns ns nC n...
Description	General-Purpose Switching Device Applications
File Size	53.61K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7380QPBF
OCR Text	... RDS(on) max 73m:@VGS = 10V ID 2.2A S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Description Specifically designed for Automo...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7380QP...
Description	HEXFET?Power MOSFET HEXFET㈢Power MOSFET
File Size	221.85K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM3K101TU
OCR Text	... range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 12 2.2 4.4 800 500 150 -55~150 Unit V V A mW C C 2.00....11-01 SSM3K101TU Switching Time Test Circuit (a) Test Circuit (b) VIN OUT IN 0V RG 10 s VDD = ...
Description	Silicon N Channel MOS Type High Speed Switching Applications
File Size	139.13K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF6644TRPBF IRF6644PBF IRF6644TR1PBF
OCR Text	...mum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR 0.08 Typical R DS (on), () (m) Max. 100 20 10.3 ...11 VGS = 8.0V VGS = 10V Typical R 10 VGS = 15V 0 4 8 12 16 20 9 16 ID, Drain Curre...
Description	Optimized for Synchronous Rectification DirectFET Power MOSFET Ideal for High Performance Isolated Converter Primary Switch Socket
File Size	252.47K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7304QPBF
OCR Text	... I D @ TA = 25C I D @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain...11 ) Pulse width 300s; duty cycle 2%. ISD -2.2A, di/dt - 50A/s, VDD V(BR)DSS, TJ 150C ...
Description	HEXFET Power MOSFET
File Size	250.85K / 9 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPCF8201
OCR Text	...Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage ...11 150 -55~150 mJ A mJ C C Unit V V V A Single-device operation Drain power (Note 3a) dissipation...
Description	Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
File Size	183.56K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7507PBF IRF7507TRPBF IRF7507PBF-15
OCR Text	...Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Cont...11/04 IRF7507PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V...
Description	Generation V Technology HEXFET㈢Power MOSFET HEXFET?Power MOSFET Ultra Low On-Resistance
File Size	211.04K / 8 Page	View it Online	Download Datasheet

				Diotec Elektronische DIOTEC[Diotec Semiconductor] Diotec Semiconductor AG
Part No.	TGL3468 TGL34-10 TGL34-100 TGL34-100A TGL34-10A TGL34-11 TGL34-110 TGL34-110A TGL34-11A TGL34-12 TGL34-120 TGL34-120A TGL34-12A TGL34-13 TGL34-130 TGL34-130A TGL34-13A TGL34-15 TGL34-150 TGL34-150A TGL34-15A TGL34-16 TGL34-160A TGL34-16A TGL34-170 TGL34-170A TGL34-18 TGL34-180 TGL34-180A TGL34-18A TGL34-20 TGL34-200 TGL34-200A TGL34-20A TGL34-22 TGL34-22A TGL34-24 TGL34-24A TGL34-27 TGL34-27A TGL34-30 TGL34-30A TGL34-33 TGL34-33A TGL34-36 TGL34-36A TGL34-39 TGL34-39A TGL34-43 TGL34-43A TGL34-47 TGL34-47A TGL34-51 TGL34-51A TGL34-56 TGL34-56A TGL34-6.8 TGL34-6.8A TGL34-62 TGL34-62A TGL34-68 TGL34-68A TGL34-7.5 TGL34-7.5A TGL34-75 TGL34-75A TGL34-8.2 TGL34-8.2A TGL34-82 TGL34-82A TGL34-9.1 TGL34-9.1A TGL34-91 TGL34-91A TGL34-160
OCR Text	...6.8 28.2 29.1 30.8 31.6 33.3 ID [:A] 1000 1000 500 500 200 200 50 50 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 VC [V] 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 2...
Description	Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes 150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
File Size	166.37K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCM8001-H07 TPCM8001-H
OCR Text	...Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.20 0.2 1 0.750.05 4 0.55 0.1660.05 A 3.50.2 S 1 4 0.60.1 2.750.2...11-16 1.050.2 0.05 S 4 TPCM8001-H Thermal Characteristics Characteristic Thermal resis...
Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
File Size	301.49K / 7 Page	View it Online	Download Datasheet

For id-11.2a Found Datasheets File :: 4543 Search Time::1.953ms
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