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110IL SM2200B 100V1 RDS6T 00LVE ENA1952A 2SA979 74LS39
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  6-pad Datasheet PDF File

For 6-pad Found Datasheets File :: 65729    Search Time::1.547ms    
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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...drives * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Sour...pad of 2 oz copper b) 105/W when 2 mounted on a .04 in pad of 2 oz copper c) 125/W when mounte...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    HI-8050 HI-8050PQI HI-8050PQT HI-8051PQT HI-8150 HI-8150PQI HI-8151PQT HI-8151PQI HI-8051 HI-8051PQI HI-8150PQT HI-8151

Holt Integrated Circuit...
HOLTIC[Holt Integrated Circuits]
Holt Integrated Circuits, Inc.
HOLT INTEGRATED CIRCUITS INC
Part No. HI-8050 HI-8050PQI HI-8050PQT HI-8051PQT HI-8150 HI-8150PQI HI-8151PQT HI-8151PQI HI-8051 HI-8051PQI HI-8150PQT HI-8151 HI-8150SERIES
OCR Text ...S1 S2 S3 S4 S5 S6 S7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 HI-8050PQI HI-8150PQI HI-8050PQT & HI-8150PQT 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 S27 S26 S25 S24 S23 S22 S21 S20 DOUT38 DOUT32 DOUT30 T2 T1 N/C BPOUT N/C (Se...
Description XCR3256XL-10TQ144I
128 MACROCELL 3.3 VOLT ZERO POWER ISP CP - NOT RECOMMENDED for NEW DESIGN
128 MACROCELL 3.3 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN
CMOS High Voltage LCD Display Driver (30-38 Segments)
CAP METAL POLYPRO .62UF 630V 5% LIQUID CRYSTAL DISPLAY DRIVER, PQFP52
CMOS HIGH VOLTAGE DISPLAY DRIVER LIQUID CRYSTAL DISPLAY DRIVER, PQFP52

File Size 245.98K  /  8 Page

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    IRF130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF130SMD
OCR Text 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M ax. 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) N-CH...Pad 1 - Gate Pad 2 - Drain Pad 3 - Source * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS...
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.36K  /  2 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text 6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 ...Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also available with pins 1 and 3 reversed...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) SEME IRF150SMD N-CHANNEL POWER M...Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also available with pins 1 and 3 reversed...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field ...Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text 6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 ...Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also available with pins 1 and 3 reversed...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...endent of Operating Temperature 6.7 - 0.20 0.24 10 16 67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - ...Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD TEST CONDITIONS VGS = 0...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text 6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 ...Pad 1 - Gate Pad 2 - Drain Pad 3 - Source Note: IRFNxxx also available with pins 1 and 3 reversed...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...0 V; VGS = 10 V MIN. 100 89 2 1 6.4 TYP. MAX. UNIT 3 80 11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V ...pad VGS = 0 V; VDS = 25 V; f = 1 MHz REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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