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3gpp Datasheet PDF File

For 3gpp Found Datasheets File :: 814 Search Time::1.359ms
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				NXP Semiconductors
Part No.	BLF6G20-230PRN10
OCR Text	...PR (dBc) -31[1] Test signal: 3gpp; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken...
Description	Power LDMOS transistor
File Size	126.59K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G22LS-7510 BLF6G22LS-75
OCR Text	... (dBc) -41.5[1] Test signal: 3gpp; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken ...
Description	Power LDMOS transistor BLF6G22LS-75<SOT502B (SOT502B)\|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G22LS-75<SOT502B (SOT502B)\|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,; Product description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
File Size	125.09K / 11 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	AGR21030EF
OCR Text	...pical performance for 2 carrier 3gpp W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel BW, adjacent channel BW = 3.84 MHz at F1 - 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1 - 10 MHz a...
Description	30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
File Size	319.89K / 9 Page	View it Online	Download Datasheet

				AVAGO
Part No.	ACPM-7357
OCR Text	...t=50ohm C signal con?guration: 3gpp (dpcch+1dpdch) up-link unless speci?ed otherwise characteristics condition min t y p max unit operating frequency range 1920 C 1980 mhz gain high power mode, pout=27dbm 24 27.3 db mid power mode, pout...
Description	Power Amplifier Module
File Size	367.83K / 19 Page	View it Online	Download Datasheet

				AVAGO
Part No.	ACPM-5013
OCR Text	...t linearity compliant with 3gpp public safety band emission (ns_07) spec 3-mode power control with vbp and vmode bypass / mid power mode / high power mode high efficiency at max output power 10-pin surface mounting pac...
Description	Power Amplifier Module
File Size	312.26K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G22-180PN
OCR Text	...PR (dBc) -35[1] Test signal: 3gpp; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken...
Description	Power LDMOS transistor
File Size	76.97K / 11 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF0805A
OCR Text	...DQ = 400 mA, Modulation signal: 3gpp TEST MODEL 1 ( W-CDMA ) 4 Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF0805A L & S Band GaAs FET [ SMD non-matched ] Example of Circuit Schematic and Characteri...
Description	L & S Band GaAs FET [ SMD non-matched ]
File Size	113.02K / 8 Page	View it Online	Download Datasheet

				Infineon
Part No.	S-GOLD3H
OCR Text	...mpling HSDPA protocol stack 3gpp WCDMA FDD multimode type II protocol stack 3gpp WCDMA FDD multimode type II protocol stack Full support of 3gpp release 5 HSDPA Full support of 3gpp release 5 HSDPA Supports GSM, GPRS and EDGE up to Clas...
Description	Presentation of Prof. Dr. Hermann Eul on the occation of a press briefing on February 10 in Munich
File Size	6,972.21K / 20 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MHVIC2115R2
OCR Text	..., IDQ3 = 117 mA, Pout = 34 dBm, 3gpp Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain -- 30 dB PAE = 16% Driver Application * Typical W - CDMA Performance: - 53 dBc ACPR, 2110 - 2170 MHz, VDD = 26 Volts, IDQ1 = 96 m...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	390.45K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA082201E09 PTFA082201F
OCR Text	...0 V, IDQ = 1950 mA, = 894 MHz, 3gpp WCDMA signal, P/A R = 8.1 dB, 10 MHz carrier spacing, 3.84 MHz bandwidth 50 40 30 20 10 0 30 35 40 45 50 -30 -35 -40 -45 Features * * * IMD (dBc), ACPR (dBc) Thermally-enhanced packages, Pb-free...
Description	Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ??894 MHz Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 ?894 MHz
File Size	342.39K / 10 Page	View it Online	Download Datasheet

For 3gpp Found Datasheets File :: 814 Search Time::1.359ms
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