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TY Semiconductor Co., Ltd
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| Part No. |
CJQ4438
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| OCR Text |
... capacitance c rss v ds =30v,v gs =0v,f =1mhz 116 pf switching parameters (note 4) turn-on delay time t d(on) 8.2 n...2a 14.4 nc notes : 1. the value of r ja is measured with the device mounted on 1 in 2... |
| Description |
SOP8 Plastic-Encapsulate MOSFETS
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| File Size |
415.40K /
3 Page |
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WEITRON[Weitron Technology]
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| Part No. |
WT2310
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| OCR Text |
...tching
Turn-on Delay Time2 VDS=30v,VGS=10V,ID=1A,RD=30,RG=3.3 Rise Time VDS=30v,VGS=10V,ID=1A,RD=30,RG=3.3 Turn-off Delay Time VDS=30v,VGS=...2a
VSD
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25 26
1.2 -
V ns nC
Reverse Recovery Time VGS=0V,IS=3A, dl/dt=100A/s Reve... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
617.40K /
6 Page |
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| Part No. |
2SK3747
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| OCR Text |
...it input capacitance ciss v ds =30v, f=1mhz 380 pf output capacitance coss v ds =30v, f=1mhz 70 pf reverse transfer capacitance crss v ds =3...2a 37.5 nc gate-to-source charge qgs v ds =200v, v gs =10v, i d =2a 2.7 nc gate-to-drain miller char... |
| Description |
2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
37.00K /
4 Page |
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SamHop Microelectronics
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| Part No. |
STT622S
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| OCR Text |
...switching characteristics v dd =30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =4.2a v ds =5v , i d =4.2a input capacitance output capacitance dynamic ... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.94K /
7 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXMC3A17DN8TC ZXMC3A17DN8 ZXMC3A17DN8TA
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| OCR Text |
30v ENHANCEMENT MODE MOSFET
SUMMARY N-Channel : V(BR)DSS= 30v : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30v : RDS(on)= 0.070 ; I...2a, V GS =0V
18.8 14.1
ns nC
T j =25C, I F = 3.5A, di/dt=100A/ s
Measured under pulsed c... |
| Description |
COMPLEMENTARY 30v ENHANCEMENT MODE MOSFET
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| File Size |
273.54K /
10 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXMC6A09DN8TC ZXMC6A09DN8 ZXMC6A09DN8TA
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| OCR Text |
... =15V,V GS =5V, I D =3.5A V DD =30v, I D =1.0A R G 6.0, V GS =10V
V SD t rr Q rr
0.85 26.3 26.6
0.95
V ns nC
T J =25C, I S =6...2a, V GS =0V T J =25C, I F =-2.1A, di/dt= 100A/s
(1) Measured under pulsed conditions. Width 300s... |
| Description |
N & P-channel MOSFET
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
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| File Size |
287.24K /
10 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXMD63C03XTC ZXMD63C03X ZXMD63C03XTA
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| OCR Text |
30v DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V(BR)DSS=30v; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30v; RDS(...2a, V GS =0V T j =25C, I F =-1.2a, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.6 4.8 13.1 9.... |
| Description |
30v DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
617.17K /
11 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXMN3A14FTC ZXMN3A14F ZXMN3A14FTA
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| OCR Text |
30v N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=30v : RDS(on)=0.065 ; ID=3.9A DESCRIPTION
This new generation of Trench MOSFETs f...2a V GS = 4.5V, I D = 2.6A V DS = 15V, I D = 3.2a
V DS = 15V, V GS =0V f=1MHz
V DD = 15V, V GS... |
| Description |
30v N-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
197.08K /
7 Page |
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it Online |
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