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  30a 60v Datasheet PDF File

For 30a 60v Found Datasheets File :: 687    Search Time::1.031ms    
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    SPD30N08S2L-21

Infineon Technologies AG
Part No. SPD30N08S2L-21
OCR Text ...jmax 2) Reverse diode dv/dt IS=30a, VDS=60v, di/dt=200A/s, T jmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD30N08S2L-21 The...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - DPAK; 30 A; 75V; LL; 20,5 mOhm

File Size 263.31K  /  8 Page

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    SPD30N08S2-22

Infineon Technologies AG
Part No. SPD30N08S2-22
OCR Text ...jmax 2) Reverse diode dv/dt IS=30a, VDS=60, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and stor...60v, ID =30a, VGS =0 to 10V VDD =60v, ID =30a Symbol Conditions min. Values typ. 34 1466 32...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - DPAK; 30 A; 75V; NL; 21,5 mOhm

File Size 264.75K  /  8 Page

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    MTN60NF06LJ3

Cystech Electonics Corp.
Part No. MTN60NF06LJ3
OCR Text ... 60a r ds(on) @v gs =10v, i d =30a 10m (typ) r ds(on) @v gs =4.5v, i d =20a 12m (typ) features ? simple drive requirement ? ...60v, v gs =0v i dss - - 25 a v ds =60v, v gs =0v, tj=125 c - 10 14 v gs =10v, i d =3...
Description N-Channel Enhancement Mode Power MOSFET

File Size 255.88K  /  9 Page

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    STD60NF06 STD60NF06T4 CD00003115 D60NF06

ST Microelectronics
STMicroelectronics
Part No. STD60NF06 STD60NF06T4 CD00003115 D60NF06
OCR Text ... resistance v gs = 10v, i d = 30a 0.014 0.016 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15v, i d = 30a 20 s c ...
Description STD60NF06
N-channel 60v - 0.014ohm - 60A - DPAK STripFET II Power MOSFET

File Size 387.85K  /  13 Page

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    TSM100N06CZC0

Taiwan Semiconductor Company, Ltd
Part No. TSM100N06CZC0
OCR Text ...resistance v gs = 10v, i d = 30a r ds(on) -- 5.7 6.7 m ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2 3 4 ...60v n-channel power mosfet ...
Description 60v N-Channel Power MOSFET

File Size 600.91K  /  6 Page

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    STB60NF06-1 STB60NF06T4 STB60NF0606 STB60NF06

STMicroelectronics
Part No. STB60NF06-1 STB60NF06T4 STB60NF0606 STB60NF06
OCR Text ... VGS, ID = 250A VGS = 10V, ID = 30a 2 0.015 Min. 60 1 10 100 4 0.016 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 5. Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transco...
Description N-channel 60v - 0.014Ω - 60A - D2PAK/I2PAK STripFET?/a> II Power MOSFET
N-channel 60v - 0.014ヘ - 60A - D2PAK/I2PAK STripFET⑩ II Power MOSFET

File Size 389.53K  /  14 Page

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    TS868C06R

Fuji Electric
Part No. TS868C06R
OCR Text 30a) features low ir low v f center tap connection applications high frequency operation dc-dc converters ac adapter maximum ratings ...60v junction to case max. 0.74 200 1.25 unit v a c/w rating 60 60 1500 30 16...
Description Low IR Schottky barrier diode

File Size 124.35K  /  3 Page

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    STB60NF06L06 STB60NF06L STP60NF06L STP60NF06LFP STB60NF06LT4

STMicroelectronics
Part No. STB60NF06L06 STB60NF06L STP60NF06L STP60NF06LFP STB60NF06LT4
OCR Text ... 4. Starting Tj = 25 C, ID = 30a, VDD = 30V Table 2. Thermal data D2PAK TO-220 TO-220FP 5.0 62.5 35 300 C/W C/W C/W C Rthj-case Thermal resistance junction-case Rthj-amb Rthj-pcb Tl Thermal resistance junction-ambient Thermal r...
Description N-channel 60v - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET
N-channel 60v - 0.012ヘ - 60A - TO-220/D2PAK/TO-220FP STripFET⑩ II Power MOSFET
N-channel 60v - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP STripFET?/a> II Power MOSFET

File Size 488.33K  /  16 Page

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    Pulse Electronics, Corp.
PULSE ELECTRONICS CORP
Part No. LP30-2.5B132 LP34-2.25B61 LP40-1.9B56 LP56-0.9B70 LP56-0.35B69 LP40-3.4B67 LP24-0.85B54 LP24-2.1B55 LP40-0.5B64
OCR Text ...15b45 2 16v c.t. @ 3.15a 8v @ 6.30a lp16-4.75b46 3 16v c.t. @ 4.75a 8v @ 9.50a lp16-8.5b47 4 16v c.t. @ 8.50a 8v @ 17.0a lp16-12.5b48 5 16v ...60v @ 340ma lp120-0.425b80 2 120v c.t. @ 425ma 60v @ 850ma lp120-0.625b81 3 120v c.t. @ 625ma 60v @ ...
Description SPLIT BOBBIN POWER TRANSFORMER, 75 VA
SPLIT BOBBIN POWER TRANSFORMER, 50 VA
SPLIT BOBBIN POWER TRANSFORMER, 20 VA
SPLIT BOBBIN POWER TRANSFORMER, 135 VA

File Size 125.03K  /  1 Page

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    NTE[NTE Electronics]
Part No. NTE6093
OCR Text .... . . . . . . . . . . . . . . . 30a Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....60v, Square Wave, TC = +125C), IFM . . . . . . . . . . . . . 60A Non-Repetitive Peak Surge Current, ...
Description Silicon Rectifier Dual, Schottky Barrier
Silicon Rectifier Dual Schottky Barrier

File Size 17.28K  /  2 Page

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For 30a 60v Found Datasheets File :: 687    Search Time::1.031ms    
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