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200us Datasheet PDF File

For 200us Found Datasheets File :: 703 Search Time::3.375ms
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				Microsemi
Part No.	1214GN-280LV
OCR Text	...rmal resistance pulse widt h=200us, duty=20% 0.35 c/w ? bias condition: vdd=+50v, idq=270ma constant current (vgs= -2.0 ~ -4.5v typical) functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v ...
Description	GaN Transistors
File Size	136.11K / 7 Page	View it Online	Download Datasheet

				BEL[Bel Fuse Inc.]
Part No.	07CY-85T12L 07CY-85T050 07CY-85T05L 07CY-85T120 07CY-85T03L 07CY-85T 07CY-85T033
OCR Text	...% 300mV 250uS 300mV 250uS 200mV 200us 200mV 200us 150mV 150uS 150mV 150uS 150mV 150mV 100mV 30mS 5% 1000uF 10000uF 20000uF 500mV 350uS 500mV 350uS 300mV 300uS 300mV 300uS 200mV 200us 200mV 200us 10A 23A 30A 13A 29A 36A 2 3A s 25mV 25mV 15mV...
Description	ISOLATED DC/DC CONVERTERS 48V Input 3.3V/25A, 5V/20A, 12V/8.33A Output, 1/8 Brick
File Size	150.09K / 6 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27UH08AG5B
OCR Text	...ns (min.) - Page program time : 200us (typ.) - Multi-page program time (2 pages) : 200us (Typ) COPY BACK PROGRAM - Automatic block download without latency time FAST BLOCK ERASE - Block erase time: 1.5ms (Typ) - Multi-block erase time (2 bl...
Description	16Gbit (2Gx8bit) NAND Flash
File Size	374.82K / 51 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text	...in stable condition for minimum 200us. 3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high . 4. Issue precharge command for all banks of the device. 5. Issue a EMRS command to enable DLL *1 6. Iss...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
File Size	295.12K / 17 Page	View it Online	Download Datasheet

				E-CMOS Corporation
Part No.	EC3201S
OCR Text	...t 1v/div isw 1a/div 200us/div vin 5v/div ven 5v/div vout 1v/div isw 1a/div 10us/div output ripple (vin=5.0v, vout=1.8v, iload=1a) load transient (vin=5.0v, vout=1.8v, iload=0. 05a ~ 1 a) ...
Description	1A, 1.5MHz, Synchronous Step Down DC/DC Converter
File Size	562.25K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	3134-65M
OCR Text	200us, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION The 3134-65M is an internally matched, COMMON BASE bipolar transistor capable of providing 65Watts of pulsed RF output power at 200us pulse width, 10% duty factor across the 3100 to 3400 ...
Description	65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz
File Size	66.79K / 4 Page	View it Online	Download Datasheet

				Microsemi
Part No.	3134-65M
OCR Text	... 3134-65m 65watts, 34 volts, 200us, 10% radar 3100-3400 mhz general description the 3134-65m is an internally matched, common base bipolar transistor capable of providing 65watts of pulsed rf output power at 200us pulse width, 10%...
Description	Pulsed Power S-Band (Si)
File Size	52.74K / 4 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5RS573225F
OCR Text	...table the GDDR3 device requires 200us before the RES pin transitions to high. Upon power-up and after the clock is stable, the on die termination value for the address and control pins will be set, based on the state of CKE when the RES pin...
Description	256 GDDR3 SDRAM
File Size	1,329.13K / 63 Page	View it Online	Download Datasheet

				Samsung
Part No.	K4D263238I-UC
OCR Text	...in stable condition for minimum 200us. 3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high. 4. Issue precharge command for all banks of the device. 5. Issue a EMRS command to enable DLL *1 6. Issu...
Description	128M GDDR SDRAM
File Size	493.19K / 17 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K4D263238I-VC
OCR Text	...in stable condition for minimum 200us. 3. The minimum of 200us after stable power and clock(CK,CK ), apply NOP and take CKE to be high. 4. Issue precharge command for all banks of the device. 5. Issue a EMRS command to enable DLL *1 6. Issu...
Description	128M-Bit GDDR SDRAM
File Size	479.12K / 19 Page	View it Online	Download Datasheet

For 200us Found Datasheets File :: 703 Search Time::3.375ms
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