200a 30v n-channel power mosfe pdf Datasheet P3 Description --- IC-ON-LINE


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200a 30v n-channel power mosfe Datasheet PDF File

For 200a 30v n-channel power mosfe Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
Part No.	2MBI200-120-01 2MBI200NB-120-01
Description	1200V / 200a 2 in one-package 1200V / 200a 2 in one-package 1200 200安培在一2级封 IGBT module
File Size	194.12K / 4 Page	View it Online	Download Datasheet

				Solid State Devices, Inc. Solid States Devices, Inc Solid States Devices, I...
Part No.	SPMQ613-01TXV PM0027A PM0027A-15
Description	200 A, 600 V, n-channel IGBT HERMETIC SEALED PACKAGE-7 600V, 200a FAST SWITCHING IGBT HALF BRIDGE
File Size	130.05K / 3 Page	View it Online	Download Datasheet

				Bourns, Inc.
Part No.	ETM36-030
Description	TRANSISTOR \| BJT power MODULE \| DARLINGTON \| 400V V(BR)CEO \| 200a I(C) 晶体管\|晶体管电源模块\|达林顿\| 400V五（巴西）总裁\| 200安培我（丙）
File Size	131.88K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc.
Part No.	CM200DY24E
Description	TRANSISTOR \| IGBT power MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 200a I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 200安培我（丙）
File Size	320.14K / 4 Page	View it Online	Download Datasheet

				Mitel Networks, Corp.
Part No.	GP200MHB12S
Description	TRANSISTOR \| IGBT power MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 200a I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 200安培我（丙）
File Size	451.00K / 10 Page	View it Online	Download Datasheet

				powerex, Inc.
Part No.	CM200DU12H
Description	TRANSISTOR \| IGBT power MODULE \| HALF BRIDGE \| 600V V(BR)CES \| 200a I(C) 晶体管\| IGBT功率模块\|半桥\| 600V的五（巴西）国际消费电子展\| 200安培我（丙）
File Size	291.84K / 4 Page	View it Online	Download Datasheet

				Continental Device India Limited
Part No.	CMBA847G CMBA847E CMBA847F
Description	0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200a Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200a Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200a Ic, 150 - 300 hFE. TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 200MA I(C) \| SOT-23
File Size	75.33K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	BUK475-100A BUK475-100B
Description	powerMOS transistor Isolated version of BUK455-200a/B(BUK454-200a/B隔离版本的功率MOS场效应管) powerMOS transistor Isolated version of BUK455-100A/B
File Size	72.85K / 7 Page	View it Online	Download Datasheet

				Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor
Part No.	DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 DS1390U-33 DS1392U-18 DS1391U-33 DS1390U-18 DS1391U-18 DS1390-DS1393
Description	RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10 IGBT Module; Continuous Collector Current, Ic:200a; Collector Emitter Saturation Voltage, Vce(sat):3.4V; power Dissipation, Pd:1500W; Collector Current:200a; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
File Size	742.03K / 24 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B
Description	RECTIFIER BRIDGE 8A 100V 200a-ifsm 1V-vf 5uA-ir GBU 20/TUBE RECTIFIER BRIDGE 8A 200V 200a-ifsm 1V-vf 5uA-ir GBU 20/TUBE powerMOS transistor
File Size	64.66K / 7 Page	View it Online	Download Datasheet

For 200a 30v n-channel power mosfe Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |