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Intersil
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| Part No. |
ACS03MS
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| OCR Text |
... 1.125kA Metal 2 Thickness: 9kA 1ka GLASSIVATION: Type: SiO2 Thickness: 8kA 1ka WORST CASE CURRENT DENSITY: <2.0 x 105A/cm 2 BOND PAD SIZE: 110m x 110m 4.3 mils x 4.3 mils
Metallization Mask Layout
ACS03MS
B1 (2) A1 (1) VCC (14) B4 (13... |
| Description |
NAND Gate, Quad 2-Input, Rad-Hard, Advanced Logic, CMOS
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| File Size |
63.60K /
3 Page |
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it Online |
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Intersil
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| Part No. |
HS-6664RH
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| OCR Text |
...ion: Type: SiO2 Thickness: 8kA 1ka Top Metallization: M1:6kA 1ka Si/Al/Cu 2kA 500A TiW M2:10kA 2kASi/Al/Cu ASSEMBLY RELATED INFORMATION: Substrate Potential: VDD ADDITIONAL INFORMATION: Worst Case Current Density: 2 x 105 A/cm2 Transistor... |
| Description |
PROM, CMOS, 8Kx8, 65ns, 500A, Nichrome Fuse, Rad-Hard
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| File Size |
132.60K /
5 Page |
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it Online |
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Intersil
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| Part No. |
HS-26CT32RH
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| OCR Text |
... Silicon Glass) Thickness: 10kA 1ka Top Metallization: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1ka Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: VDD (When Powered Up) ADDITI... |
| Description |
Differential Line Receiver, Quad, TTL Enable, 5V, Rad-Hard
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| File Size |
51.06K /
2 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
HS-26CT32RH-T
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| OCR Text |
...0A M2: Al/Si/Cu Thickness: 10kA 1ka SUBSTRATE POTENTIAL: Internally connected to VDD . May be left floating. BACKSIDE FINISH: Silicon PASSIVATION: Type: SiO2 Thickness: 8kA 1ka WORST CASE CURRENT DENSITY: < 2.0e5 A/cm 2 TRANSISTOR COUNT: 31... |
| Description |
Differential Line Receiver, Quad, TTL Enable, 5V, Rad-Hard
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| File Size |
61.29K /
3 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
HS-26CT31RH-T
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| OCR Text |
... Silicon Glass) Thickness: 10kA 1ka Metallization: M1: Mo/TiW Thickness: 5800A M2: Al/Si/Cu (Top) Thickness: 10kA 1ka Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): VDD ADDITIONA... |
| Description |
Differential Line Driver, Quad, TTL Inputs and Enable, 5V, Rad-Hard
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| File Size |
72.13K /
2 Page |
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it Online |
Download Datasheet |
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| Part No. |
IRGC5B120UB
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| OCR Text |
...n, thickness: al-ti-niv-ag ( 1ka-1ka-4ka-6ka ) norminal front metal composition, thickness: 99% al, 1% si (4 microns) dimensions: 0.112" x 0.150" wafer diameter: 150mm, with std. < 100 > flat wafer thickness: 185 +/- 15 microns r... |
| Description |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
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| File Size |
14.78K /
1 Page |
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it Online |
Download Datasheet |
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Intersil
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| Part No. |
HS-26C31RH HS-26CT31RH
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| OCR Text |
... Silicon Glass) Thickness: 10kA 1ka Metallization: M1: Mo/TiW Thickness: 5800A M2: Al/Si/Cu (Top) Thickness: 10kA 1ka Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): VDD ADDITIONA... |
| Description |
Differential Line Driver, Quad, CMOS Inputs and Enable, 5V, Rad-Hard
Differential Line Driver, Quad, TTL Inputs and Enable, 5V, Rad-Hard
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| File Size |
43.17K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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