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Taoglas antenna solutio...
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| Part No. |
TG358113
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| OCR Text |
...) 698~960 1565~ 1612 1710~1990 1920~2170 2400~2500 2500~2700 4800~6000 effi ciency (%) in free space straight 53.92 ...09 average gain (dbi) in free space straight - 2.71 - 2.55 - 1.91 - 2.05 - 3.05 ... |
| Description |
Apex II - Hinged TG.35 Ultra-Wideband 4G LTE Antenna
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| File Size |
9,243.74K /
79 Page |
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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| Part No. |
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
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| OCR Text |
...ations. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW E...09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Micro... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
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| File Size |
486.59K /
8 Page |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF18090BSR3
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| OCR Text |
...c, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 ...09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstr... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
385.00K /
8 Page |
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Infineon Technologies A...
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| Part No. |
PTF191601E PTF191601F
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| OCR Text |
...wer rf ldmos fets 160 w, 1930 ? 1990 mhz features ? thermally-enhanced packaging ? broadband internal matching ? typical edge performance - ...09-16 ptf191601e ptf191601f rf characteristics (cont.) two-tone measurements (tested in infineon ... |
| Description |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
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| File Size |
198.47K /
10 Page |
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Price and Availability
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