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  1990-09 Datasheet PDF File

For 1990-09 Found Datasheets File :: 811    Search Time::1.5ms    
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    Taoglas antenna solutio...
Part No. TG358113
OCR Text ...) 698~960 1565~ 1612 1710~1990 1920~2170 2400~2500 2500~2700 4800~6000 effi ciency (%) in free space straight 53.92 ...09 average gain (dbi) in free space straight - 2.71 - 2.55 - 1.91 - 2.05 - 3.05 ...
Description    Apex II - Hinged TG.35 Ultra-Wideband 4G LTE Antenna

File Size 9,243.74K  /  79 Page

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    74F3037 N74F3037D N74F3037N I74F3037D I74F3037N

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74F3037 N74F3037D N74F3037N I74F3037D I74F3037N
OCR Text 1990 Feb 09 Philips Semiconductors Philips Semiconductors Product specification Quad 2-input NAND 30 driver 74F3037 FEATURES * 30 line driver * 67mA output drive capability in the high state * High speed * Facilitates i...
Description Quad 2-input NAND 30ohm driver
Quad 2-input NAND 30W driver

File Size 74.76K  /  8 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...ations. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW E...09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Micro...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    PTFB191501E PTFB191501F

Infineon Technologies AG
Part No. PTFB191501E PTFB191501F
OCR Text ... cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced, rohs-compliant package with sl...09-09 ptfb191501e ptfb191501f confidential, limited internal distribution *see infineon distributor ...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz

File Size 288.13K  /  15 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF18090BSR3
OCR Text ...c, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 ...09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstr...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 385.00K  /  8 Page

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    Infineon Technologies A...
Part No. PTF191601E PTF191601F
OCR Text ...wer rf ldmos fets 160 w, 1930 ? 1990 mhz features ? thermally-enhanced packaging ? broadband internal matching ? typical edge performance - ...09-16 ptf191601e ptf191601f rf characteristics (cont.) two-tone measurements (tested in infineon ...
Description Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

File Size 198.47K  /  10 Page

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    AH215-S8 AH215 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140

List of Unclassifed Manufacturers
WJ Communications
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufac...
Part No. AH215-S8 AH215 AH215-S8PCB900 AH215-S8PCB1960 AH215-S8PCB2140
OCR Text ...C -40C 1940 1950 1960 1970 1980 1990 14 12 10 8 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990 S11 (dB) -25 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise F...
Description 1 Watt, High Linearity HBT Amplifier

File Size 251.04K  /  6 Page

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    MRF18060BLR3 MRF18060B MRF18060BLSR3

Freescale Semiconductor, Inc
Part No. MRF18060BLR3 MRF18060B MRF18060BLSR3
OCR Text ...tions. Specified for GSM 1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW E...09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Micro...
Description RF Power Field Effect Transistor

File Size 322.25K  /  12 Page

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