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  15.00m Datasheet PDF File

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) D = 0.50 ...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...20 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 1 Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) D = 0.50 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...15 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. --- 0.50 ---...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...10 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. --- 0.50 --- -...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

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    LM319 LM319M LM319N LM319MX

FAIRCHILD[Fairchild Semiconductor]
Part No. LM319 LM319M LM319N LM319MX
OCR Text ...18 5 15 10 500 0 ~ + 70 -65 ~ + 150 Unit V V V V V V sec mW C C 2 LM319 Electrical Characteristics (VCC = + 15V, VEE = - 15V, TA =...0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation 2. A critical component in any ...
Description Dual Comparator

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    LM556CM LM556CN LM556_NE556 LM556 NE556 NE556D

FAIRCHILD[Fairchild Semiconductor]
Part No. LM556CM LM556CN LM556_NE556 LM556 NE556 NE556D
OCR Text ...ue 16 300 600 0 ~ + 70 - 65 ~ + 150 Unit V C mW C C 2 LM556/NE556 Electrical Characteristics (TA = 25C, VCC = 5 ~ 15V, unless othe...0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation 2. A critical component in any ...
Description    Dual Timer
From old datasheet system

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    MUR160 MUR140

DIODES[Diodes Incorporated]
Part No. MUR160 MUR140
OCR Text ...40 400 283 1.0 35 1.25 1.05 5.0 150 50 75 50 45 72 -65 to +175 MUR160 600 424 Unit V V A A V mA ns ns ns pF K/W C Measured at 1.0MH...0M, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50. -1.0A Set time base for 50/100 ns/cm ...
Description 1.0A SUPER-FAST RECTIFIER

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    2N7002

PANJIT[Pan Jit International Inc.]
Part No. 2N7002
OCR Text ... ID P D 115 800 200 -55 to +150 625 TJ , TSTG RJA C/W Part Number: 2N7002 PAGE 1 ELECTRICAL CHARACTERISTICS TA = 25OC Un...0m s ID, Drain Current (A) 0.5 RD 0.1 0.05 S(O L N) t imi RL VIN D VOUT 1m ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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    2SB1420

SANKEN[Sanken electric]
Part No. 2SB1420
OCR Text ... -6 -16(Pulse-26) -1 80(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C 2SB1420 sElectrical Characteristics Symbol ICBO IEBO V(BR...0m m A A A -12m -20 Collector Current I C (A) -6 mA Collector Current I C( A) ...
Description Silicon PNP Epitaxial Planar Transistor(Chopper Regulator/ DC Motor Driver and General Purpose)
Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)

File Size 24.20K  /  1 Page

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