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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOD603L AOD603
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| OCR Text |
...S(ON) RDS(ON) < 60m (VGS=10V) < 115m (VGS =- 10V) < 150m (VGS = -4.5V) < 85m (VGS=4.5V)
D2
D1
Top View Drain Connected to Tab
G2 S2
G1 S1
n-channel
S1 G1 D1/D2 G2 S2
p-channel
Absolute Maximum Ratings T A=25C unle... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
207.60K /
9 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO6802L AO6802
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| OCR Text |
...ON) < 75m (VGS = 10V) RDS(ON) < 115m (VGS = 4.5V)
TSOP6 Top View G1 S2 G2 D1 S1 D2
D1
D2
16 25 34
G1 S1
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Sou... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.05K /
4 Page |
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it Online |
Download Datasheet |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPC6801ST6RG SPC6801
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| OCR Text |
...5m@VGS=- 10V -30V/-2.5A,RDS(ON)=115m@VGS=-4.5V -30V/-1.5A,RDS(ON)=150m@VGS=-2.5V Schottky VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi... |
| Description |
P-Channel Trench MOSFET with Schottky Diode
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| File Size |
225.99K /
9 Page |
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it Online |
Download Datasheet |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPP7401S32RG SPP7401
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| OCR Text |
...
FEATURES -30V/-2.8A,RDS(ON)=115m@VGS=- 10V -30V/-2.5A,RDS(ON)=125m@VGS=-4.5V -30V/-1.5A,RDS(ON)=170m@VGS=-2.5V -30V/-1.0A,RDS(ON)=240m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and max... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
197.11K /
8 Page |
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it Online |
Download Datasheet |
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STANSON[Stanson Technology]
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| Part No. |
ST3403
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| OCR Text |
...GS = -10V -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30V/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V RDS(ON) =255m-ohm @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capab... |
| Description |
P Channel Enchancement Mode MOSFET
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| File Size |
144.82K /
7 Page |
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it Online |
Download Datasheet |
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STANSON[Stanson Technology]
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| Part No. |
ST6006T220TG ST6006 ST6006S ST6006T220RG
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| OCR Text |
...@VGS = 4.5V 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
STANSON TECHNOLOGY
120 Bentley Square, Mo... |
| Description |
N Channel Enchancement Mode MOSFET
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| File Size |
197.75K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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