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NTE[NTE Electronics]
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Part No. |
NTE393 NTE392
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OCR Text |
.... . . . . . . . . . . . . . . . 100v Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....25a Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
Description |
Silicon Complementary Transistors General Purpose
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File Size |
20.39K /
2 Page |
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NXP Semiconductors N.V.
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Part No. |
PSMN013-100PS NXPSEMICONDUCTORSN.V.-PSMN013-100PS
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OCR Text |
... data psmn013-100ps n-channel 100v 13.9m ? standard level mosfet in to220. rev. 3 ? 29 september 2011 product data sheet to-220ab table ...25a; v ds =50v; see figure 15 ; see figure 14 -17-nc
psmn013-100ps all information provided in... |
Description |
N-channel 100v 13.9m standard level MOSFET in TO220. PSMN013-100PS<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;
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File Size |
195.92K /
15 Page |
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it Online |
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Infineon Technologies
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Part No. |
K25N120
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OCR Text |
...withstand time 2 v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 313 w operating...25a t j =25 c t j =150 c 2.5 - 3.1 3.7 3.6 4.3 diode forward voltage v f v g... |
Description |
Fast IGBT in NPT-technology
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File Size |
392.52K /
13 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
RFH25P08 RFK25P08 RFK25P10 RFH25P10
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OCR Text |
100v and -80V, 0.150 Ohm, P-Channel Power MOSFETs
Description
These are P-Channel enhancement mode silicon gate power field effect transis...25a, -100v and -80V * rDS(ON) = 0.150
[ /Title (RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10) /Subj... |
Description |
-25a, -100v and -80V, 0.150 Ohm, P-Channel Power MOSFETs 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC -25a/ -100v and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs -25a -100v and -80V 0.150 Ohm P-Channel Power MOSFETs
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File Size |
32.81K /
4 Page |
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it Online |
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New Jersey Semi-Conductor P...
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Part No. |
IRF9150
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OCR Text |
100v, 0.150 ohm, p-channel power mosfet this p-channel enhancement mode silicon gate power field effect transistor is an advanced power mosf...25a, -100v ? single pulse avalanche energy rated ? soa is power dissipation limited ? nanosecond swi... |
Description |
-25a, -100v, 0.150 Ohm, P-Channel Power MOSFET
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File Size |
148.92K /
3 Page |
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it Online |
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Price and Availability
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