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  0.20-2.80v Datasheet PDF File

For 0.20-2.80v Found Datasheets File :: 5994    Search Time::3.266ms    
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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...20 230 41 17 5.5 -55 to + 175 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C VGS EAS...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30VS-3
OCR Text ... in mm 4.5 1.3 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 10V DRIVE VDSS...20 30 120 30 30 120 70 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A A A A W C C g Feb.1999 L...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.90K  /  4 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.75 --- 62 Units C/W www.irf.com 1 01/17/02 IRF3710 Electrical Characteris...20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junc...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30UM-3
OCR Text ... 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 qwe wr q GATE w DRAIN e SOURCE r DRAIN e 10V D...20 30 120 30 30 120 70 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A A A A W C C g Feb.1999 ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Bench Power Supply; Output Voltage:35V; Output Current:6A; Number of Outputs:1; Calibrated:No; Display Technology:Digital; Output Current Max:6A; Output Current Min:0A; Output Voltage Max:35V; Output Voltage Min:0V

File Size 43.93K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS30UM-3
OCR Text ... 16 12.5MIN. 3.8MAX. 1.0 7.0 f 3.6 0.8 D 0.5 2.6 2.54 2.54 qwe wr q GATE w DRAIN e SOURCE r DRAIN e 10V D...20 30 120 30 30 120 70 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A A A A W C C g Feb.1999 ...
Description HIGH-SPEED SWITCHING USE

File Size 38.91K  /  4 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ... D VDSS = -100V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C The...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... VDSS = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...20 140 -4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS30KM-3
OCR Text 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0...20 30 120 30 30 120 30 -55 ~ +150 Unit V V A A A A A W C C V g Feb.1999 AC for 1minute, Termi...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.33K  /  4 Page

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For 0.20-2.80v Found Datasheets File :: 5994    Search Time::3.266ms    
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